This paper investigates a method to suppress the ambipolar current I_amb effectively, enhance the device performance with higher on current I_on, lower off current I_off, lower inverse subthreshold slope SS and simultaneously improve the RF performance. Starting with a conventional double-gate TFET structure, the device optimization reported in this work has led to the gradual improvement in device performance in terms of higher I_on, lower I_off, higher I_on/I_off ratio and lower SS. The RF parameters of the optimized GOTFET, such as the mutual transconductance g_m, gate-to-drain C_GD, and gate-to-source C_GS capacitances and unity-gain cut-off frequency f_T are analyzed. We have optimized the tunnel FET device using the industry-standard \(\text {synopsys}^{{\circledR }}\) TCAD tools by studying the impact of various device parameters and dimensions on performance. We demonstrated that at high negative voltages, the proposed nGOTFET would completely suppress the ambipolar behavior of the device without deteriorating the device performance. We have compared the ambipolar current I_amb, I_off, I_on, SS with 45 nm technology MOSFET and the TFETs reported earlier in literature. For the first time, we have proposed a GOTFET which completely suppresses the ambipolar current at high negative biases, without compromising the high I_on (1.04 mA/μ m) and low I_off (0.27 pA/μ m) and low SS (32 mV/dec) at room temperature.

本文研究了一种有效抑制双极性电流I _{a m b}，以更高的导通电流I _{o n}，更低的关断电流I _{o f f}，更低的反亚阈值斜率SS并同时提高RF性能的方法。从传统的双栅极TFET结构开始，这项工作中报告的器件优化已导致器件性能的逐步提高，包括更高的I _{o n}，更低的I _{o f f}，更高的I _{o n} /我_{ø ˚F ˚F}比率并降低SS。优化GOTFET，所述的RF参数，如相互跨导克_米，栅极-漏极Ç _{ģ d}，并且栅极-源ç _ģ小号电容和单位增益截止频率˚F _Ť进行了分析。我们使用行业标准\（\ text {synopsys} ^ {{\ circledR}} \）优化了隧道FET器件通过研究各种设备参数和尺寸对性能的影响，TCAD工具。我们证明，在高负电压下，提出的nGOTFET将完全抑制器件的双极性行为，而不会降低器件性能。我们已将双极性电流I _{a m b}，I _{o f f}，I _{o n}，SS与45 nm技术MOSFET和文献中较早报道的TFET进行了比较。我们首次提出了一种GOTFET，它可以在高负偏压下完全抑制双极性电流，而又不会损害高I _{o n}（1.04 mA / μ米）和低我_{ö ˚F ˚F}（0.27 PA / μ M）和低SS在室温下（32毫伏/分解）。