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Evolution of Optical, Electrical, and Structural Properties of Indium Tungsten Oxide upon High Temperature Annealing
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-07-11 , DOI: 10.1002/pssa.202000165 Dorothee Menzel 1 , Lars Korte 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-07-11 , DOI: 10.1002/pssa.202000165 Dorothee Menzel 1 , Lars Korte 1
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Optical, structural and electrical properties of thermally co‐evaporated indium tungsten oxide (IWOx) thin films with varied stoichiometry, from pure tungsten oxide to pure indium oxide (InOx) are investigated upon stepwise annealing, up to 700 °C. The thin films are candidate materials for carrier selective contacts in different types of solar cells, such as silicon hetero junction and perovskite solar cells. Three different phases for the thin films with different stoichiometry and crystallization temperatures of Tc > 500 °C for tungsten‐rich layers and Tc ≈ 200 °C for indium‐rich layers are found. The pronounced optical absorption of the as‐deposited InOx‐rich layers is strongly decreased after crystallization. Tungsten oxide rich layers show low optical absorption in the as‐deposited state as well as for all applied annealing temperatures. The lateral conductivity of the pure indium oxide can be increased from 1.24 × 10−2 up to 0.83 S cm−1 after 700 °C annealing. The conductivity of the pure tungsten oxide increases slightly after crystallization from 2.55 × 10−5 to 8.25 × 10−5 S cm−1 after annealing at 700 °C. However, for mixed oxide layers with ≈25% InOx‐fraction in the mixture, the highest conductivity of 4.0 × 10−6 S cm−1 cannot be increased by the applied annealing process.
中文翻译：
高温退火铟钨氧化物的光学，电和结构性质的演变
在逐步加热到700°C的条件下，研究了化学计量不同的热共蒸发铟钨氧化物（IWO x）薄膜的光学，结构和电学性质，从纯钨氧化物到纯铟氧化物（InO x）。薄膜是在不同类型的太阳能电池（例如硅异质结和钙钛矿太阳能电池）中用于载流子选择性接触的候选材料。对于薄膜与化学计量不同温度和结晶温度三个不同的阶段Ť Ç > 500℃富钨层和Ť Ç ≈200℃富铟层中找到。沉积的InO x的明显光吸收结晶后，富集层大大减少。富氧化钨层在沉积态以及所有施加的退火温度下均显示出较低的光吸收。在700°C退火后，纯氧化铟的横向电导率可以从1.24×10 -2增加到0.83 S cm -1。结晶后，纯钨氧化物的电导率在700°C退火后从2.55×10 -5略微增加到8.25×10 -5 S cm -1。但是，对于混合物中InO x分数约为25％的混合氧化物层，所施加的退火工艺无法提高4.0×10 -6 S cm -1的最高电导率。
更新日期：2020-07-11
中文翻译：
高温退火铟钨氧化物的光学，电和结构性质的演变
在逐步加热到700°C的条件下，研究了化学计量不同的热共蒸发铟钨氧化物（IWO x）薄膜的光学，结构和电学性质，从纯钨氧化物到纯铟氧化物（InO x）。薄膜是在不同类型的太阳能电池（例如硅异质结和钙钛矿太阳能电池）中用于载流子选择性接触的候选材料。对于薄膜与化学计量不同温度和结晶温度三个不同的阶段Ť Ç > 500℃富钨层和Ť Ç ≈200℃富铟层中找到。沉积的InO x的明显光吸收结晶后，富集层大大减少。富氧化钨层在沉积态以及所有施加的退火温度下均显示出较低的光吸收。在700°C退火后，纯氧化铟的横向电导率可以从1.24×10 -2增加到0.83 S cm -1。结晶后，纯钨氧化物的电导率在700°C退火后从2.55×10 -5略微增加到8.25×10 -5 S cm -1。但是，对于混合物中InO x分数约为25％的混合氧化物层，所施加的退火工艺无法提高4.0×10 -6 S cm -1的最高电导率。
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