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Electrocatalytic performance of cobalt doped copper bismuth oxide for glucose sensing and photoelectrochemical applications
Inorganic Chemistry Communications ( IF 4.4 ) Pub Date : 2020-09-01 , DOI: 10.1016/j.inoche.2020.108112
Neeraja Sinha Gudipati , Subramanyam Palyam , SivaRama Krishna Vanjari , Subrahmanyam Challapalli

Abstract Copper bismuth oxide (CBO), modified with cobalt as dopant has been prepared by coprecipitation and the electrode was prepared by doctor blade method. The cobalt doped copper bismuth oxide (Co-CBO) has been extensively used for selective glucose sensing and photoelectrochemical activity. Physical characterizations like X-ray diffraction, field-emission scanning electron microscopy are studied to confirm the formation of desired electrode. Linear sweep voltammetry, chronoamperometric and impedance studies explain about the electrocatalytic nature of cobalt doped CBO. Oxidation peak for glucose was observed for CBO at 0.54 V while for Co-CBO it occurred at 0.46 V. The reduction in potential is explained through synergistic catalytic enhancement due to cobalt doping. Further, Co-CBO was used for photoelectrochemical application, the electrode has shown current density of −0.80 mA cm−2 while that for CBO is −0.20 mA cm−2. Therefore, CBO has formed a desirable phase with cobalt which resulted in the enhancement of electrocatalytic performance.

中文翻译:

钴掺杂铜氧化铋的电催化性能用于葡萄糖传感和光电化学应用

摘要 采用共沉淀法制备了以钴为掺杂剂的氧化铜铋(CBO),并采用刮刀法制备了电极。钴掺杂的氧化铜铋(Co-CBO)已广泛用于选择性葡萄糖传感和光电化学活性。研究了 X 射线衍射、场发射扫描电子显微镜等物理特性,以确认所需电极的形成。线性扫描伏安法、计时电流法和阻抗研究解释了钴掺杂 CBO 的电催化性质。在 0.54 V 处观察到 CBO 的葡萄糖氧化峰,而 Co-CBO 在 0.46 V 处出现。电位的降低是通过钴掺杂引起的协同催化增强来解释的。此外,Co-CBO 用于光电化学应用,电极的电流密度为 -0.80 mA cm-2,而 CBO 的电流密度为 -0.20 mA cm-2。因此,CBO 与钴形成了理想的相,从而提高了电催化性能。
更新日期:2020-09-01
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