Herein, the integration of dielectric and ferroelectric HfAlO_x within a one‐transistor and one‐capacitor thin‐film transistor (TFT)‐based device structure is successfully demonstrated. It is found that the origin of gate stress for enhancing ferroelectricity is mainly ascribed to nonlinear thermal stress distribution, and the ferroelectricity of HfAlO_x is further improved by nitrogen plasma treatment without sacrificing leakage current during post metal annealing. Notably, the p‐type SnO TFT in series with a ferroelectric HfAlO_x capacitor with nitrogen plasma treatment achieves an almost 43% improvement on threshold voltage shift (5.45 V) at a low operating voltage of 3 V. Therefore, the ferroelectric nitridation treatment not only strengthens the ferroelectric domain switching of HfAlO_x but also improves capacitance matching with the HfAlO_x dielectric layer of p‐type SnO TFT.

中文翻译：

---

用于薄膜晶体管应用的介电和铁电Ha氧化铝的集成

在本文中，成功地证明了基于单晶体管和单电容器薄膜晶体管（TFT）的器件结构中电介质和铁电HfAlO _x的集成。发现用于增强铁电的栅极应力的起源主要归因于非线性热应力分布，并且通过氮等离子体处理在不牺牲后金属退火期间的漏电流的情况下进一步改善了HfAlO _x的铁电。值得注意的是，p型SnO TFT与铁电HfAlO _x串联在3 V的低工作电压下，经过氮等离子体处理的电容器在阈值电压偏移（5.45 V）上几乎提高了43％。因此，铁电氮化处理不仅增强了HfAlO _x的铁电畴切换，而且还改善了与p型SnO TFT的HfAlO _x介电层。