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Impact of electrode thermal conductivity on high resistance state level in HfO 2 -based RRAM
Journal of Physics D: Applied Physics ( IF 3.4 ) Pub Date : 2020-07-09 , DOI: 10.1088/1361-6463/ab92c5
Shih-Kai Lin, Cheng-Hsien Wu, Min-Chen Chen, Ting-Chang Chang, Chen-Hsin Lien, You-Lin Xu, Yi-Ting Tseng, Pei-Yu Wu, Yung-Fang Tan, Li-Chuan Sun, Yong-Ci Zhang, Jen-Wei Huang and Simon M Sze

This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions result in a more oxidized switching layer, and cause the effective switching gap (d sw ) to become larger in the reset process. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods.

中文翻译:

电极热导率对基于HfO 2的RRAM中高电阻状态水平的影响

这项研究检查了重置过程中不同电极导热率对开关行为的影响。电气分析方法和电流传导机理分析表明,电极中更好的导热性将需要较大的输入功率,以诱导更多的活性氧离子参与复位过程。活性氧离子越多,则开关层的氧化越多,并且在复位过程中有效开关间隙(d sw)变大。电极导热率和输入功率的影响由我们的模型解释,并由电分析方法阐明。
更新日期:2020-07-10
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