The microscopic transport properties of electrons and holes in MoS 2 , MoSe 2 , WS 2 and WSe 2 are studied by means of an ensemble Monte Carlo simulator. Moreover, instantaneous carrier velocity fluctuations are analyzed in depth from a microscopic point of view, including their power spectral density, which is directly related to thermal noise in the GHz range. Results show important differences in the mean free path and momentum relaxation time for electrons and holes: valence band transport has, in general, a more ballistic character, particularly for tungsten based transition metal dichalcogenides. Electrons (especially in MoSe 2 and WSe 2 ) have faster momentum relaxation times in the whole electric field range under study. Transport in subsidiary valleys is relevant for electrons, while in the case of holes it only has a minor influence, being noteworthy only for WS 2 at high electric fields. Holes present ...

中文翻译：

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蒙特卡洛研究单层过渡金属二卤化物中的噪声速度波动和微观载流子传输

利用集成蒙特卡罗模拟器研究了MoS 2，MoSe 2，WS 2和WSe 2中电子和空穴的微观传输特性。此外，从微观的角度深入分析了瞬时载波速度的波动，包括​​功率谱密度，这与GHz范围内的热噪声直接相关。结果表明，电子和空穴的平均自由程和动量弛豫时间存在重要差异：价带传输通常具有更强的弹道特性，尤其是对于钨基过渡金属二卤化物。在研究的整个电场范围内，电子（尤其是在MoSe 2和WSe 2中）具有更快的动量弛豫时间。在子谷中的传输与电子有关，而在空穴的情况下，它的影响很小。仅在高电场下对于WS 2值得关注。存在孔...