Different cobalt surfaces (as-received, metallic, and oxidized Co) were characterized by contact angle measurements, FTIR (Fourier-transform infrared spectroscopy), XPS (X-ray photoelectron spectroscopy) and EIS (electrochemical impedance spectroscopy) to investigate the interaction of these surfaces with benzotriazole (BTA). A new sequential EIS technique was used to study the inhibition capabilities of BTA on the cobalt surface and its stability under de-ionized (DI) water rinsing. It was found that a Co-BTA complex passive layer was formed when exposed to a BTA solution for all types of Co surfaces. It was hypothesized that BTA could actively form a Co-BTA complex on metallic Co as well as on the Co oxide surface. Interestingly, most Co-BTA complexes could be easily removed by simply rinsing with DI water, which indicates that BTA might not produce an organic residue issue after the chemical mechanical planarization (CMP) process. This was also well supported by potentiodynam...

中文翻译：

---

CMP应用中不同钴表面的表征以及与苯并三唑的相互作用

通过接触角测量，FTIR（傅立叶变换红外光谱），XPS（X射线光电子能谱）和EIS（电化学阻抗能谱）表征了不同钴表面（原样，金属和氧化Co）的特征，以研究这些表面带有苯并三唑（BTA）。一种新的顺序EIS技术用于研究BTA对钴表面的抑制能力及其在去离子水冲洗下的稳定性。发现当暴露于所有类型的Co表面的BTA溶液中时，形成了Co-BTA复合物钝化层。假设BTA可以在金属Co以及Co氧化物表面上积极形成Co-BTA络合物。有趣的是，只需用去离子水冲洗，大多数Co-BTA复合物都可以轻松去除，这表明在化学机械平面化（CMP）过程之后，BTA可能不会产生有机残留物问题。电位器也很好地支持了这一点。