An optically pumped semiconductor laser based on a type-II CdS/ZnSe nanoheterostructure containing 10 quantum wells (QWs) was studied. The structure was grown by metalorganic vapour phase epitaxy on a GaAs substrate. The lifetime of electron-hole pairs at a low pump level was measured by luminescence decay to be ≈10 ns. The peak power of the microcavity semiconductor laser at room temperature and longitudinal pumping by a repetitively pulsed N 2 laser was 7.2 W at a wavelength of 514 nm. The relatively low laser slope efficiency (0.35%) is explained by amplified spontaneous emission propagating along the structure. The peak power and efficiency of the laser in the case of transverse pumping increase to 70 W and 3.5%, respectively.

中文翻译：

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基于II型CdS / ZnSe异质结构的光泵浦半导体激光器

研究了基于II型CdS / ZnSe纳米异质结构的光泵浦半导体激光器，该结构包含10个量子阱（QW）。通过金属有机气相外延在GaAs衬底上生长该结构。电子-空穴对在低泵浦水平下的寿命通过发光衰减测量为≈10ns。在室温和通过重复脉冲N 2激光器进行的纵向泵浦下的微腔半导体激光器的峰值功率在514 nm波长下为7.2W。沿结构传播的自发发射放大解释了相对较低的激光斜率效率（0.35％）。横向泵浦情况下，激光器的峰值功率和效率分别增加到70 W和3.5％。