Dynamic on-resistance ( ${\text{d}R_\text{on}}$ ), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no direct ${\text{d}R_\text{on}}$ measurements in the literature above ${1}\,\text{MHz}$ , leaving designers unable to predict conduction losses in emerging multi-MHz applications. We address this literature gap by collecting the first on-state voltage ${\text{d}R_\text{on}}$ measurements at multi-MHz frequencies, with a focus on the zero-voltage-switching conditions that are predominantly employed at high frequency. On the selected commercially-available HEMT with a breakdown voltage below ${200}\,\text{V}$ , the dynamic contribution asymptotes above $\approx {2}\,\text{MHz}$ , a finding predicted by the slow time constants of the traps that cause ${\text{d}R_\text{on}}$ . For the tested HEMT, we find a maximum ${\text{d}R_\text{on}}$ increase over the DC resistance of 2 $\times $ in a multi-MHz, zero-voltage-switched application.

中文翻译：

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GaN-on-Si HEMT中多MHz开关频率对动态导通电阻的影响

动态导通电阻（ $ {\ text {d} R_ \ text {on}} $ ）（刚接通后的导通电阻高于直流电阻）会增加带有氮化镓高电子迁移率晶体管（GaN HEMT）的功率转换器中的传导损耗。没有直接的$ {\ text {d} R_ \ text {on}} $ 以上文献中的测量 $ {1} \，\ text {MHz} $ ，设计人员无法预测新兴的多MHz应用中的传导损耗。我们通过收集第一个导通电压来解决这一文献差距$ {\ text {d} R_ \ text {on}} $在多MHz频率下进行测量，重点是在高频下主要采用的零电压开关条件。在选定的市售HEMT上且击穿电压低于$ {200} \，\ text {V} $ ，上面的动态贡献渐近线 $ \ approx {2} \，\ text {MHz} $ ，这是由导致陷阱的缓慢时间常数预测的发现 $ {\ text {d} R_ \ text {on}} $ 。对于经过测试的HEMT，我们找到了一个最大值$ {\ text {d} R_ \ text {on}} $ 直流电阻增加2 $ \次$ 在多MHz，零电压开关应用中。