This paper presents the results of a study on the structural properties and dynamics of conductivity of thin (d ∼ 100 nm) films of germanium telluride depending on the phase states reversibly switched by nanosecond pulsed laser radiation with a «top hat» beam profile. It was determined that the threshold of laser radiation energy density at which the phase transition in GeTe thin films from the amorphous to crystalline state is in the range of E = 7.5 ÷ 47.6 mJ/cm2, and the threshold for the reverse transition from the crystalline to amorphous state starts from 47.6 mJ/cm2 and is observed up to 90 mJ/cm2 with no visible damage caused by the ablation. The full time of conductivity change associated with the phase transition between the amorphous and crystalline phases is τCA = 20.2 ns, while for the reverse crystalline to amorphous transition, the conductivity full change time it makes τAC = 52 ns.

中文翻译：

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GeTe薄膜中的多级可逆激光诱导相变

本文介绍了对碲化锗薄（d ~ 100 nm）薄膜的结构特性和电导动力学的研究结果，这取决于具有“顶帽”光束轮廓的纳秒脉冲激光辐射可逆地切换的相状态。确定了 GeTe 薄膜从非晶态到晶态的相变的激光辐射能量密度阈值在 E = 7.5 ÷ 47.6 mJ/cm2 的范围内，以及从晶态反向跃迁的阈值非晶态从 47.6 mJ/cm2 开始，观察到高达 90 mJ/cm2，没有由烧蚀引起的可见损伤。与非晶相和结晶相之间的相变相关的电导率变化的全时间为 τCA = 20.2 ns，而对于反向结晶到非晶相转变，