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Laterally Asymmetric Channel based Tunnel Field Effect Transistors: Design and investigation
International Journal of Electronics ( IF 1.1 ) Pub Date : 2020-08-04 , DOI: 10.1080/00207217.2020.1793400
Mohd Haris 1 , Sajad A. Loan 1 , Mainnuddin   1 , Abdulrahman M. Alamoud 2
Affiliation  

In this paper, we propose and simulate a lateral asymmetrically doped channel-based tunnel field-effect transistor. The impact of laterally asymmetric channel (LAC) on the performance of a Tunnel F...

中文翻译:

基于横向非对称通道的隧道场效应晶体管:设计和研究

在本文中,我们提出并模拟了一种横向不对称掺杂的基于沟道的隧道场效应晶体管。横向非对称信道 (LAC) 对隧道性能的影响...
更新日期:2020-08-04
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