Abstract The most promising and feasible approach to achieving high-efficiency silicon solar cells must be passivation contact compatible with current homojunction thermal processes. In this paper, an easy-to-implement carrier-selective passivation contact with doped poly-Si/SiOx for produing p-type passivated emitter and rear cell (PERC) was proposed. The passivation contact structure consisted of an ultra-thin SiOx layer capped with an intrinsic amorphous silicon (a-Si) layer prepared by low pressure chemical vapor deposition, which was deposited onto a p-type silicon substrate and then was doped and re-crystallized by a thermal phosphorus diffusion at 850 °C for 75 min. By optimizing the diffusion profile and cleaning time, a low dark recombination current density J0 ≈ 3 fA/cm2 and large minority carrier lifetime of 3000 μs were achieved on the 180-μm-thick n-type wafers with a resistivity of 3 Ω·cm, corresponding to an implied open-circuit voltage of 700 mV. P-type PERC cells with the highly doped poly-Si/SiOx passivated emitter demonstrated 683.97 mV of open-circuit voltage, showing more than 10 mV enhancement comparing with regular PERC cells. The results demonstrated an attractive potential of the carrier-selective passivation contacts with doped poly-Si/SiOx under front metallizatin area in photovoltaic application.

中文翻译：

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通过掺杂多晶硅层作为钝化接触提高 p 型钝化发射极和后电池的开路电压

摘要 实现高效硅太阳能电池最有前途和最可行的方法必须是与当前同质结热工艺兼容的钝化接触。在本文中，提出了一种易于实施的载流子选择性钝化接触与掺杂的多晶硅/SiOx 接触，用于生产 p 型钝化发射极和后电池 (PERC)。钝化接触结构由覆盖有通过低压化学气相沉积制备的本征非晶硅 (a-Si) 层的超薄 SiOx 层组成，将其沉积到 p 型硅衬底上，然后进行掺杂和重结晶通过在 850°C 下进行 75 分钟的热磷扩散。通过优化扩散曲线和清洁时间，在电阻率为 3 Ω·cm 的 180 μm 厚 n 型晶片上实现了低暗复合电流密度 J0 ≈ 3 fA/cm2 和 3000 μs 的大少数载流子寿命，对应于隐含的开路电压700 毫伏。具有高掺杂多晶硅/SiOx 钝化发射极的 P 型 PERC 电池表现出 683.97 mV 的开路电压，与常规 PERC 电池相比显示出超过 10 mV 的增强。结果表明，在光伏应用中，前金属化区域下方的掺杂多晶硅/SiOx 的载流子选择性钝化接触具有有吸引力的潜力。与常规 PERC 电池相比，显示出超过 10 mV 的增强。结果表明，在光伏应用中，前金属化区域下方的掺杂多晶硅/SiOx 的载流子选择性钝化接触具有有吸引力的潜力。与常规 PERC 电池相比，显示出超过 10 mV 的增强。结果表明，在光伏应用中，前金属化区域下方的掺杂多晶硅/SiOx 的载流子选择性钝化接触具有有吸引力的潜力。