Abstract Aiming at the inaccurate problems of lifetime prediction and reliability evaluation of 3D Trinary-Level Cell (TLC) NAND flash memory, a method to evaluate the remaining lifetime and the reliability of flash memory based on the threshold voltage distribution is proposed. In order to analyze the impact on Program/Erase (P/E) cycles on the flash memory from the perspective of voltage distribution, a complete distribution curve of threshold voltage is drawn from the construction of a reasonable mathematical model. Compared with the conventional used curve of P/E cycles-error rate, it reflects the most concentrated part of the flash memory error rate and makes lifetime prediction more accurate.

中文翻译：

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基于阈值电压分布的3D TLC NAND闪存可靠性研究

摘要 针对3D Trinary-Level Cell (TLC) NAND闪存寿命预测和可靠性评估不准确的问题，提出了一种基于阈值电压分布的闪存剩余寿命和可靠性评估方法。为了从电压分布的角度分析Program/Erase（P/E）周期对闪存的影响，通过构建合理的数学模型，绘制了完整的阈值电压分布曲线。与常规使用的P/E周期-错误率曲线相比，它反映了闪存错误率最集中的部分，使寿命预测更加准确。