Single ionization by electron impact is studied in the Si atom by performing level-to-level calculations. Direct and indirect processes of the ionization are investigated for all levels of the ground configuration. It is demonstrated that cross sections are heavily dependent on the initial level for which the ionization is considered. The cross sections of the indirect process differ by more than a factor of two for the lowest and highest levels of the ground configuration. The scaled distorted wave cross sections are used to explain experimental data. Modeling shows that $\sim$70% of the atoms in the beam belong to the levels of the ${}^{3}P$ term. The cross sections and Maxwellian rate coefficients are tabulated for the electron-impact collisional ionization and excitation–autoionization processes.

通过执行逐级计算，研究了在Si原子中通过电子碰撞产生的单次电离。针对地面构造的所有水平，研究了电离的直接和间接过程。已经证明，横截面在很大程度上取决于考虑电离的初始水平。对于最低和最高水平的地面配置，间接过程的横截面相差两个以上。缩放后的扭曲波横截面用于解释实验数据。建模表明$〜$光束中70％的原子属于 ${}^{3}P$术语。列出了电子碰撞碰撞电离和激发自电离过程的横截面和麦克斯韦速率系数。