Doping of semiconductors, i.e., accurately modulating the charge carrier type and concentration in a controllable manner, is a key technology foundation for modern electronics and optoelectronics. However, the conventional doping technologies widely utilized in silicon industry, such as ion implantation and thermal diffusion, always fail when applied to two-dimensional (2D) materials with atomically-thin nature. Surface charge transfer doping (SCTD) is emerging as an effective and non-destructive doping technique to provide reliable doping capability for 2D materials, in particular 2D semiconductors. Herein, we summarize the recent advances and developments on the SCTD of 2D semiconductors and its application in electronic and optoelectronic devices. The underlying mechanism of STCD processes on 2D semiconductors is briefly introduced. Its impact on tuning the fundamental properties of various 2D systems is highlighted. We particularly emphasize on the SCTD-enabled high-performance 2D functional devices. Finally, the challenges and opportunities for the future development of SCTD are discussed.

半导体的掺杂，即以可控的方式精确地调节电荷载流子的类型和浓度，是现代电子学和光电子学的关键技术基础。但是，在硅工业中广泛使用的常规掺杂技术（例如离子注入和热扩散）在应用于原子级薄的二维（2D）材料时总是会失败。表面电荷转移掺杂（SCTD）逐渐成为一种有效且无损的掺杂技术，可为2D材料（尤其是2D半导体）提供可靠的掺杂能力。在此，我们总结了2D半导体SCTD的最新进展和发展及其在电子和光电设备中的应用。简要介绍了STCD工艺在2D半导体上的潜在机理。重点介绍了它对调整各种2D系统基本属性的影响。我们特别强调启用了SCTD的高性能2D功能设备。最后，讨论了SCTD未来发展的挑战和机遇。