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Barrier-assisted vapor phase CVD of large-area MoS2 monolayers with high spatial homogeneity
Nanoscale Advances ( IF 4.6 ) Pub Date : 2020-07-09 , DOI: 10.1039/d0na00524j
Santhosh Durairaj 1 , P Krishnamoorthy 1 , Navanya Raveendran 1 , Beo Deul Ryu 2 , Chang-Hee Hong 2 , Tae Hoon Seo 3 , S Chandramohan 1
Affiliation  

Atomically thin molybdenum disulphide (MoS2) is a direct band gap semiconductor with negatively charged trions and stable excitons in striking contrast to the wonder material graphene. While large-area growth of MoS2 can be readily achieved by gas-phase chemical vapor deposition (CVD), growth of continuous MoS2 atomic layers with good homogeneity is indeed one of the major challenges in vapor-phase CVD involving all-solid precursors. In this study, we demonstrate the growth of large-area continuous single crystal MoS2 monolayers on c-plane sapphire by carefully positioning the substrate using a facile staircase-like barrier. The barrier offered great control in mitigating the secondary and intermediate phases as well as second layer nucleation, and eventually a continuous monolayer with high surface homogeneity is realized. Both micro-Raman and high-resolution transmission electron microscopy (HRTEM) results confirmed the high structural quality of the grown MoS2 layers. Using low temperature photoluminescence spectroscopy, additional pieces of information are provided for the strong band-edge emission in the light of vacancy compensation and formation of Mo–O bonding. The monolayer MoS2 transferred to SiO2/Si exhibited a room temperature field-effect mobility of ∼1.2 cm2 V−1 s−1 in a back-gated two-terminal configuration.

中文翻译:


具有高空间均匀性的大面积MoS2单层的势垒辅助气相CVD



原子薄的二硫化钼 ( MoS2 ) 是一种直接带隙半导体,具有带负电的三离子和稳定的激子,与神奇材料石墨烯形成鲜明对比。虽然MoS 2的大面积生长可以通过气相化学气相沉积(CVD)轻松实现,但具有良好均匀性的连续MoS 2原子层的生长确实是涉及全固态前驱体的气相CVD的主要挑战之一。在这项研究中,我们通过使用简单的阶梯状势垒仔细定位基板,展示了大面积连续单晶MoS 2单层在c平面蓝宝石上的生长。该势垒在减轻第二相和中间相以及第二层成核方面提供了很好的控制,并最终实现了具有高表面均匀性的连续单层。显微拉曼和高分辨率透射电子显微镜 (HRTEM) 结果均证实了所生长的 MoS 2层的高结构质量。使用低温光致发光光谱,根据空位补偿和 Mo-O 键合的形成,为强带边发射提供了额外的信息。转移到SiO 2 /Si的单层MoS 2在背栅两端结构中表现出~1.2 cm 2 V -1 s -1的室温场效应迁移率。
更新日期:2020-09-16
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