An anodic bonding model of Si/SiO 2 -glass is established and demonstrated. In the theoretical part, charge movement in Si/SiO 2 -glass anodic bonding is studied in detail. On this basis, an equivalent circuit model of anodic bonding with SiO 2 structure is established. By solving the corresponding Poisson equation, the formulas for the width of the depletion layer and the electrostatic force during Si/SiO 2 -glass anodic bonding are obtained. In addition, the breakdown mechanism of SiO 2 in anodic bonding is explained with 1/E model, and the breakdown type of SiO 2 is analyzed. In the experimental part, through the analysis of the anodic bonding curve, we have concluded that soft breakdown of SiO 2 occurs in the Si/SiO 2 -glass structure for the first time. At a temperature of 340 °C, for SiO 2 with a thickness of 2000 Å and 3400 Å, the soft breakdown voltages are measured as 223.4 V and 424.3...

中文翻译：

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以SiO 2介电层为中间层的阳极键合模型

建立并证明了Si / SiO 2-玻璃的阳极键合模型。在理论部分，详细研究了Si / SiO 2-玻璃阳极键合中的电荷运动。在此基础上，建立了具有SiO 2结构的阳极键合等效电路模型。通过求解相应的泊松方程，获得了Si / SiO 2-玻璃阳极键合过程中耗尽层宽度和静电力的公式。此外，用1 / E模型解释了阳极键合过程中SiO 2的击穿机理，并分析了SiO 2的击穿类型。在实验部分，通过对阳极键合曲线的分析，我们得出结论，SiO 2的软击穿首次出现在Si / SiO 2-玻璃结构中。在340°C的温度下，对于厚度为2000Å和3400Å的SiO 2，