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Influence of Oxygen Defects and Their Evolution on the Ferromagnetic Ordering and Band Gap of Mn-Doped ZnO Films
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-07-08 , DOI: 10.1021/acs.jpcc.0c04049 Abdel Khaleq Mousa Alsmadi 1, 2 , Belal Salameh 1, 3 , Mouath Shatnawi 2
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-07-08 , DOI: 10.1021/acs.jpcc.0c04049 Abdel Khaleq Mousa Alsmadi 1, 2 , Belal Salameh 1, 3 , Mouath Shatnawi 2
Affiliation
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We performed a comprehensive investigation on the influence of oxygen vacancies (VO) defects and their evolution under Mn substitution and thermal annealing in different atmospheres on the ferromagnetic ordering and optical energy band gap (Eg) of Mn-doped ZnO thin films. All doped films showed a ferromagnetic phase at room temperature, which became stronger at low temperatures. Our results clearly showed a direct link between the concentration of VO and the observed ferromagnetism (FM). By increasing the Mn concentration (CMn), both photoluminescence and X-ray photoelectron spectroscopy results revealed an enhancement in the concentration of VO, in parallel with a clear improvement in the FM. In addition, the FM in the doped films became stronger after annealing in vacuum and weaker after annealing in air, in accordance with a considerable increase and decrease in the concentration of VO that mediates the observed ferromagnetic order. The results also indicated a direct correlation between the Eg behavior and the concentration of VO. Films with a high CMn having a narrower Eg and higher VO level are found to show stronger FM. On increasing the CMn, a slight shift in the Eg to lower values is detected, indicating weak sp–d hybridization. All doped films showed a single phase with würtzite structure, and the Mn2+ ions are proved to substitute for the Zn2+ in the würtzite lattice.
中文翻译：
氧缺陷及其演变对掺杂Mn的ZnO薄膜铁磁有序和带隙的影响
我们对氧空位（V O）缺陷及其在不同气氛下Mn置换和热退火下的演变对Mn掺杂ZnO薄膜的铁磁有序化和光能带隙（E g）的影响进行了全面研究。所有掺杂的薄膜在室温下均显示出铁磁相，而在低温下则变得更强。我们的结果清楚地表明了V O的浓度与观测到的铁磁性（FM）之间的直接联系。通过增加Mn浓度（C Mn），光致发光和X射线光电子能谱结果均显示V O浓度增加，同时在FM方面有明显的改进。此外，掺杂的薄膜中的FM在真空中退火后变强，在空气中退火后变弱，这与介导观察到的铁磁有序的V O浓度显着增加和降低有关。结果还表明，E g行为与V O浓度之间存在直接关系。发现具有较窄的E g和较高的V O水平的具有高C Mn的膜显示出更强的FM。增加C Mn时，E g略有变化检测到较低的值，表明sp-d杂交较弱。所有掺杂的薄膜均显示具有纤锌矿结构的单相，并且已证明Mn 2+离子可替代纤锌矿晶格中的Zn 2+。
更新日期：2020-07-23
中文翻译：
氧缺陷及其演变对掺杂Mn的ZnO薄膜铁磁有序和带隙的影响
我们对氧空位（V O）缺陷及其在不同气氛下Mn置换和热退火下的演变对Mn掺杂ZnO薄膜的铁磁有序化和光能带隙（E g）的影响进行了全面研究。所有掺杂的薄膜在室温下均显示出铁磁相，而在低温下则变得更强。我们的结果清楚地表明了V O的浓度与观测到的铁磁性（FM）之间的直接联系。通过增加Mn浓度（C Mn），光致发光和X射线光电子能谱结果均显示V O浓度增加，同时在FM方面有明显的改进。此外，掺杂的薄膜中的FM在真空中退火后变强，在空气中退火后变弱，这与介导观察到的铁磁有序的V O浓度显着增加和降低有关。结果还表明，E g行为与V O浓度之间存在直接关系。发现具有较窄的E g和较高的V O水平的具有高C Mn的膜显示出更强的FM。增加C Mn时，E g略有变化检测到较低的值，表明sp-d杂交较弱。所有掺杂的薄膜均显示具有纤锌矿结构的单相，并且已证明Mn 2+离子可替代纤锌矿晶格中的Zn 2+。
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