The growth of vanadium dioxide (VO₂) thin films using tetrakis (ethyl-methyl) amino vanadium (TEMAV) and H₂O by atomic layer deposition (ALD) has been investigated as a function of the exposure dose and residence time. A novel multiple pulse mode has been employed to mitigate the small deposition rate brought about by the low vapor pressure of TEMAV. Compared to the conventional ALD cycle with a single pulse of precursor, the use of multiple pulsing with very short pulse time allows lower consumption of precursor, but larger exposure dose and longer residence time on the growth surface, resulting in a higher growth rate for a low volatility precursor, while maintaining a good film uniformity across 4-in. wafers. The Raman analysis and the electrical resistivity modulation of the VO₂ thin films show that the films synthesized by the multiple pulse mode is comparable to the films synthesized by the conventional single pulse mode.

中文翻译：

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前驱体剂量和停留时间对原子层沉积对二氧化钒薄膜生长速率和均匀性的影响

已经研究了使用四（乙基-甲基）氨基钒（TEMAV）和H ₂ O通过原子层沉积（ALD）来生长二氧化钒（VO ₂）薄膜的方法，该薄膜是曝光剂量和停留时间的函数。已经采用新颖的多脉冲模式来减轻由TEMAV的低蒸气压带来的小的沉积速率。与具有单个前驱物脉冲的常规ALD循环相比，使用具有非常短脉冲时间的多重脉冲可以降低前驱物的消耗量，但是具有更大的暴露剂量和更长的在生长表面上的停留时间，从而导致了更高的生长速率。低挥发性前体，同时在4英寸内保持良好的薄膜均匀性。晶圆。VO的拉曼分析和电阻率调制_2个薄膜表明，通过多脉冲模式合成的膜与通过常规单脉冲模式合成的膜相当。