Cu₂O and CuO are promising p-type semiconductor materials, which show potential for a variety of applications from photovoltaics to high-T_c superconductors. Atomic layer deposition (ALD) presents an advantageous technique for the growth of copper oxide due to the ability to grow on a variety of substrate materials and geometries with atomic precision in thickness and high uniformity. The work presented here is a comprehensive study on the effect of boost and precursor delivery on the growth of copper oxide films using the same precursor and under the same reactor environment. This is critical to understanding the growth mechanism and properties of ALD grown copper oxide films using the same starting precursor while varying the coreactants. In this study, the deposition of copper oxide is performed using the precursor bis-(dimethylamino-2-propoxide) Cu(II) (Cudmap) and either water or ozone as a coreactant. Keeping the copper precursor pulse constant, CuO films were produced with ozone, while Cu₂O films were obtained using water. Through conventional precursor delivery, a saturated growth rate of 0.19 and 0.045 Å/cycle is established using ozone and water as coreagents, respectively. In order to enable more efficient precursor delivery, a vapor boost modification was implemented, which doubled the film growth rate to 0.38 Å/cycle when using ozone, higher than previously reported. While there was no increased growth rate using the vapor boost with water, the growth rate could be doubled to 0.09 Å/cycle by tripling the water dosage. In both cases, the as-deposited films were smoother when implementing a vapor boost and polycrystalline as deposited, which has not been previously observed for Cu₂O films grown with Cudmap. From the results here, growth of CuO using ozone is most improved by using a Cudmap vapor boost delivery, indicating Cudmap limited growth, while Cu₂O growth is limited by the water dosage.

中文翻译：

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使用水或臭氧增强双-（二甲基氨基-2-丙氧基）铜的输送来全面表征氧化铜原子层沉积

Cu ₂ O和CuO是有前途的p型半导体材料，在从光伏到高T _c的各种应用中均显示出潜力超导体。原子层沉积（ALD）提供了一种用于氧化铜生长的有利技术，这是因为它能够在各种厚度和高度均匀的原子精度的衬底材料和几何形状上生长。本文介绍的工作是使用相同的前驱体和在相同的反应器环境下，助推和前驱体输送对氧化铜膜生长的影响的综合研究。这对于了解使用相同的起始前体同时改变共反应剂的ALD生长的氧化铜膜的生长机理和性能至关重要。在这项研究中，使用前体双-（二甲基氨基-2-丙氧基）Cu（II）（Cudmap）和水或臭氧作为共反应剂进行氧化铜的沉积。保持铜前驱体脉冲恒定，用水获得_2个O膜。通过常规的前体输送，分别使用臭氧和水作为核心试剂，可以建立0.19和0.045Å/循环的饱和增长率。为了使前驱物更有效地输送，实施了蒸汽增强改性，当使用臭氧时，使膜生长速率翻了一番，达到0.38Å/循环，高于先前报道的水平。虽然用水蒸气增强没有增加生长速率，但是通过将水的剂量增加三倍，可以将生长速率翻倍至0.09Å/循环。在这两种情况下，当实施蒸汽增强时，沉积后的膜均较光滑，并且沉积时具有多晶，这以前从未观察到Cu _2。O影片与Cudmap一起成长。根据此处的结果，通过使用Cudmap蒸汽增强输送，可以最大程度地改善使用臭氧的CuO的生长，这表明Cudmap的生长受到限制，而Cu ₂ O的生长受到水剂量的限制。