SiO₂-Fe₂O₃ mixture films and nanolaminates were grown by atomic layer deposition from iron trichloride, hexakis(ethylamino)disilane, and ozone at 300 °C. Orthorhombic ɛ-Fe₂O₃ was identified in Fe₂O₃ reference films and in Fe₂O₃ layers grown to certain thicknesses between amorphous SiO₂ layers. SiO₂-Fe₂O₃ films could be magnetized in external fields, exhibiting saturation and hysteresis in nonlinear magnetization-field curves. Electrical resistive switching, markedly dependent on the ratio of the component oxides, was also observed in films with proper composition. For relatively conductive films, application of small signal measurements allowed one to record memory maps with notable squareness and defined distinction between high and low conductance states.

中文翻译：

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混合膜和纳米层压板的磁性能和电阻转换，该复合膜和纳米层压板由通过原子层沉积法生长的铁和硅氧化物组成

SiO ₂ -Fe ₂ O ₃混合膜和纳米叠层是通过三氯化铁，六（乙基氨基）乙硅烷和臭氧在300°C下通过原子层沉积来生长的。斜方晶系ɛ -铁₂ ö ₃中的Fe被鉴定₂ ö ₃参考膜和以Fe ₂ ö ₃层非晶质的SiO之间生长到一定厚度的₂层。SiO ₂ -Fe ₂ O ₃薄膜可以在外部磁场中磁化，在非线性磁化场曲线中表现出饱和度和磁滞。在具有适当组成的膜中也观察到电阻转换，其明显取决于组分氧化物的比例。对于相对导电的薄膜，小信号测量的应用使人们可以记录具有显着矩形性和高电导率状态与低电导率状态之间的区别的存储图。