This paper investigates manganese-doped zinc oxide (ZnMnO) thin films grown using the atomic layer deposition (ALD) technique. ZnO and MnO layers were deposited alternatively using diethyl zinc and manganese (III) acetylacetonate (Mn(acac)₃) as metallic precursors. A suppressed growth rate for both materials was observed during the growth of ZnMnO samples, which is due to reduced adsorption of the precursor molecules on the surface of the sample. Structural characterization of the ZnMnO films shows a weak polycrystalline structure for the as-deposited thin films. On the other hand, thermally annealed samples demonstrated a textured polycrystalline structure with a distinct (002) orientation. A red shift in the near band edge absorption was observed by increasing the Mn:Zn ratio. The results of this work demonstrate the potential in ALD growth of high-quality wide bandgap ZnMnO thin films that can be used as an active semiconductor material in memory and logic devices.

中文翻译：

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原子层沉积制备（Zn，Mn）O薄膜的结构和光学性质

本文研究了使用原子层沉积（ALD）技术生长的锰掺杂的氧化锌（ZnMnO）薄膜。ZnO和MnO层交替使用二乙基锌和乙酰丙酮锰（III）（Mn（acac）₃）作为金属前体。在ZnMnO样品的生长过程中，两种材料的生长速率均受到抑制，这是由于前体分子在样品表面上的吸附减少所致。ZnMnO薄膜的结构表征表明，所沉积的薄膜具有较弱的多晶结构。另一方面，热退火样品显示出具有明显（002）取向的织构多晶结构。通过增加Mn：Zn比率，可以观察到近带边缘吸收的红移。这项工作的结果证明了高质量宽带隙ZnMnO薄膜在ALD生长中的潜力，该薄膜可用作存储器和逻辑器件中的活性半导体材料。