Vacuum ultraviolet-absorption spectroscopy (AS) and emission spectroscopy (ES) from delocalized probe plasma are implemented in the downstream chamber of a soft-etch industrial plasma reactor. A capacitively coupled plasma plasma, running in the upper compartment in He/NF₃/NH₃/H₂ mixtures at about 1 Torr, produces reactive species which flow through a shower head into a downstream chamber, where they can etch different μ-electronic materials: Si, SiO₂, SiN, etc. The ES reveals the presence of F atoms, while the dissociation rates of NF₃ and NH₃ are deduced from the AS, as well as the density of HF molecules, produced by chemical chain-reactions between dissociation products of NF₃, NH₃, and H₂. The variations of HF density as a function of the NH₃ flow rate suggest the possible formation of NH₄F molecules in the plasma.

中文翻译：

---

用于下游软蚀刻等离子体反应器中物种检测的真空紫外吸收光谱法和离域等离子体诱导发射

来自离域探针等离子体的真空紫外吸收光谱（AS）和发射光谱（ES）在软蚀刻工业等离子体反应器的下游腔室中实现。电容耦合等离子体等离子体在大约1 Torr的He / NF ₃ / NH ₃ / H ₂混合物中的上部隔室中运行，产生反应性物质，该物质通过喷头流入下游腔室，在那里它们可以蚀刻不同的μ电子。材料：Si，SiO ₂，SiN等。ES揭示了F原子的存在，而NF ₃和NH ₃的解离速率由AS推导得到NF ₃，NH ₃和H _2的离解产物之间的化学链反应所产生的HF分子的密度以及HF分子的密度。HF密度随NH ₃流速的变化表明在血浆中可能形成NH ₄ F分子。