Thin films of the sp²-hybridized polytypes of boron nitride (BN) are interesting materials for several electronic applications such as UV devices. Deposition of epitaxial sp²-BN films has been demonstrated on several technologically important semiconductor substrates such as SiC and Al₂O₃ and where controlled thin film growth on Si would be beneficial for integration of sp²-BN in many electronic device systems. The authors investigate the growth of BN films on Si(111) by chemical vapor deposition from triethylboron [B(C₂H₅)₃] and ammonia (NH₃) at 1300 °C with focus on treatments of the Si(111) surface by nitridation, carbidization, or nitridation followed by carbidization prior to BN growth. Fourier transform infrared spectroscopy shows that the BN films deposited exhibit sp² bonding. X-ray diffraction reveals that the sp²-BN films predominantly grow amorphous on untreated and pretreated Si(111), but with diffraction data showing that turbostratic BN can be deposited on Si(111) when the formation of Si₃N₄ is avoided. The authors accomplish this condition by combining the nitridation procedure with reactions from the walls on which B_xC had previously been deposited.

中文翻译：

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三乙基硼和氨气在Si（111）衬底上化学气相沉积sp2-氮化硼：表面处理的影响

氮化硼（BN）的sp ^2-杂化多型薄膜是一些电子应用（例如UV器件）中令人感兴趣的材料。已经在诸如SiC和Al ₂ O _3的几种技术上重要的半导体衬底上证明了外延sp ² -BN膜的沉积，并且在Si衬底上受控的薄膜生长将对许多电子设备系统中的sp ² -BN的集成有利。作者研究了通过三乙基硼[B（C ₂ H ₅）₃ ]和氨气（NH ₃）的化学气相沉积法在Si（111）上生长BN膜。）在1300°C时，重点在于在氮化硼生长之前先进行氮化，碳化或氮化，然后进行碳化处理Si（111）表面。傅里叶变换红外光谱表明，沉积的BN薄膜具有sp ²键合。X射线衍射表明，sp ² -BN膜主要在未处理和预处理的Si（111）上生长非晶态，但衍射数据显示，避免形成Si ₃ N ₄时，可在Si（111）上沉积透层BN 。作者通过将氮化过程与先前在其上沉积了B _x C的壁的反应相结合来实现此条件。