Gallium oxide (Ga₂O₃) thin films were laser ablation deposited on Si(100) substrates in vacuum, argon, and oxygen (O₂) at different substrate temperatures by using the pulsed laser deposition technique. X-ray diffraction patterns showed that the films were crystallized in a mixed phase of β-Ga₂O₃ and Ga(OH)₃. Data from scanning electron microscopy and atomic force microscopy showed that the major influence in the deposition conditions on the photoluminescence (PL) intensity was through changes in the particle morphology and surface topography of the films. The surface morphology studied using a field emission scanning electron microscope showed that the films were made of nanoparticles of spherical and cubic shapes at lower and higher temperatures, respectively. The energy-dispersive x-ray spectroscopy spectra confirmed the presence of the major elements Ga and O, with C coming from atmospheric hydrocarbons and Si from Si impurity in Ga₂O₃ and the substrate. The Si peak intensity was found to increase with the deposition temperature. X-ray photoelectron spectroscopy further confirmed the presence of Ga, O, C, Si, and N on the surface of the films. The PL spectrum excited using a 325 nm He-Cd laser showed nanoparticle shape driven tunable broadband emissions in the wavelength range between 350 and 750 nm. The comparison of the PL intensities of the films deposited in different atmospheres shows that the film deposited in O₂ has the highest PL intensity.

中文翻译：

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沉积环境和温度对脉冲激光沉积Ga2O3薄膜的光致发光，颗粒形貌和晶体结构的影响

氧化镓（Ga ₂ O ₃）薄膜通过使用脉冲激光沉积技术在真空，氩气和氧气（O ₂）中在不同衬底温度下激光烧蚀沉积在Si（100）衬底上。X射线衍射图案显示该膜在的混合相结晶，β -Ga ₂ ö ₃和Ga（OH）₃。扫描电子显微镜和原子力显微镜的数据表明，沉积条件对光致发光（PL）强度的主要影响是通过改变薄膜的颗粒形态和表面形貌。使用场发射扫描电子显微镜研究的表面形态表明，该膜分别由球形和立方体形的纳米颗粒在较低和较高温度下制成。能量色散x射线光谱证实了主要元素Ga和O的存在，其中C来自大气碳氢化合物，Si来自Ga ₂ O _3中的Si杂质。和基材。发现Si峰强度随沉积温度增加。X射线光电子能谱进一步证实了膜表面上存在Ga，O，C，Si和N。使用325 nm He-Cd激光器激发的PL光谱在350至750 nm的波长范围内显示了纳米粒子形状驱动的可调宽带发射。比较在不同气氛下沉积的膜的PL强度，表明在O _2中沉积的膜具有最高的PL强度。