ABSTRACT Pure and Sb-doped Cu2Se thin films have been prepared by the simple chemical bath deposition method. The structural, morphological, compositional, optical and electrical properties of the Cu2Se films were analysed using x-ray diffraction (XRD), scanning electron microscope (SEM), Energy-dispersive X-ray spectroscopy (EDAX), UV-Visible (UV–Vis) spectrophotometry and Hall Effect set-up, respectively. The XRD analysis shows the cubic structure of pure and Sb-doped Cu2Se thin films. The crystallite size is found to be decreased for Sb concentration. The morphological studies revealed spherical-shaped particles for Cu2Se and 0.03 M Sb-doped Cu2Se films. The 0.03 M Sb-doped Cu2Se films shows pinholes. The optical absorption study shows good optical absorption forpure and Sb-doped Cu2Se thin films. The bandgap value of pure Cu2Se film is about 1.52(2) eV and it is found to be increased for Sb-doped films. The Hall Effect measurement confirms p-type conductivity for pure and Sb doped Cu2Se thin films. The carrier concentration value of the Sb-doped Cu2Se thin films is found to be increased.

中文翻译：

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化学浴沉积法制备的 Sb 掺杂 Cu2Se 薄膜的电学和光学特性

摘要 通过简单的化学浴沉积法制备了纯的和掺 Sb 的 Cu2Se 薄膜。使用 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、能量色散 X 射线光谱 (EDAX)、紫外-可见 (UV– Vis) 分光光度法和霍尔效应设置，分别。XRD 分析显示纯和 Sb 掺杂的 Cu2Se 薄膜的立方结构。发现晶粒尺寸随 Sb 浓度而减小。形态学研究揭示了用于 Cu2Se 和 0.03 M Sb 掺杂的 Cu2Se 薄膜的球形颗粒。0.03 M Sb 掺杂的 Cu2Se 薄膜显示出针孔。光吸收研究表明纯和 Sb 掺杂的 Cu2Se 薄膜具有良好的光吸收。纯Cu2Se薄膜的带隙值约为1。52(2) eV 并且发现 Sb 掺杂薄膜会增加。霍尔效应测量证实了纯和 Sb 掺杂的 Cu2Se 薄膜的 p 型电导率。发现掺杂 Sb 的 Cu2Se 薄膜的载流子浓度值增加。