Ferromagnetic Josepshon junctions (SFS JJs) are the basic cell of an intense research activity that extends to spintronics. The simultaneous presence of low-dissipative behavior and spin-filtering properties in JJs composed of ferro-insulating barriers (SI_fS JJs) suggests their possible implementation in dissipationless versions of spintronics devices. Here, we establish a direct correlation between the suppression of the critical current in the experimental I–V curves of SI_fS JJs and the spin-polarization factor derived in terms of the tunneling amplitudes for spin up and down carriers. A modelling of the JJs in terms of the Tunnel Junction Microscopic model allows to provide the scaling of the suppression parameter as a function of the barrier thickness.

铁磁Josepshon结（SFS JJs）是扩展到自旋电子学的一项广泛研究活动的基本单元。在由铁绝缘势垒（SI _f S JJ）组成的JJ中同时存在低耗散行为和自旋滤波特性，这表明它们可能在无耗电自旋电子器件中实现。在这里，我们建立了对SI _f S JJs实验IV曲线中的临界电流的抑制与根据自旋向上和向下载流子的隧穿幅度得出的自旋极化因子之间的直接关系。根据隧道结微观模型对JJ进行建模，可以根据势垒厚度提供抑制参数的缩放比例。