In this study, silver–polydopamine–hexagonal boron nitride (h-BN@Ag) particles were prepared using mussel chemistry and reducibility of catechol. The modified method was simple and eco-friendly. In addition, we prepared h-BN@Ag/polyimide (PI) composite films via in situ polymerization, the scraper method, and thermal imidization. Owing to the good dispersion of the h-BN@Ag filler particles in the PI matrix and the bridging role of the Ag nanoparticles, the thermal conductivities of the h-BN@Ag/PI composite films were higher than that of the pure PI film. The thermal conductivity of the h-BN@Ag/PI film with the filler content of 10 wt% was 0.382 W (m·K)−1, which was 108% higher than that of pure PI films (0.184 W (m·K) −1). Furthermore, the composite films presented extremely low dielectric permittivity and loss tangent. Moreover, the heat resistance index of the composite films (304.6°C) was higher than that of pure PI (294.3°C). Thus, h-BN@Ag/PI composite films could be promising electronic packaging materials.

中文翻译：

---

纳米银改性六方氮化硼填充介电、导热、耐热聚酰亚胺复合薄膜

在这项研究中，使用贻贝化学和邻苯二酚的还原性制备了银-聚多巴胺-六方氮化硼 (h-BN@Ag) 颗粒。改进后的方法简单、环保。此外，我们通过原位聚合、刮刀法和热亚胺化制备了 h-BN@Ag/聚酰亚胺 (PI) 复合薄膜。由于h-BN@Ag填料颗粒在PI基体中的良好分散性和Ag纳米颗粒的架桥作用，h-BN@Ag/PI复合薄膜的热导率高于纯PI薄膜. 填料含量为 10 wt% 的 h-BN@Ag/PI 薄膜的热导率为 0.382 W (m·K)-1，比纯 PI 薄膜的热导率 (0.184 W (m·K)-1 高 108% ) -1)。此外，复合薄膜呈现出极低的介电常数和损耗角正切。而且，复合薄膜的耐热指数（304.6℃）高于纯PI（294.3℃）。因此，h-BN@Ag/PI 复合薄膜可能是很有前途的电子封装材料。