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Epitaxial Stabilization of SrCu3O4 with Infinite Cu3/2O2 Layers.
Inorganic Chemistry ( IF 4.3 ) Pub Date : 2020-07-08 , DOI: 10.1021/acs.inorgchem.0c01213
Hiroshi Takatsu 1 , Masayuki Ochi 2 , Naoya Yamashina 1 , Morito Namba 1 , Kazuhiko Kuroki 2 , Takahito Terashima 3 , Hiroshi Kageyama 1
Affiliation  

We report the epitaxial thin-film synthesis of SrCu3O4 with infinitely stacked Cu3O4 layers composed of edge-sharing CuO4 square planes, using molecular-beam epitaxy. Experimental and theoretical characterizations showed that this material is a metastable phase that can exist by applying tensile biaxial strain from the (001)-SrTiO3 substrate. SrCu3O4 shows an insulating electrical resistivity in accordance with the Cu2+ valence state revealed by X-ray photoelectron spectroscopy. First-principles calculations also indicated that the unoccupied d3z2r2 band becomes substantially stabilized owing to the absence of apical anions, in contrast to A2Cu3O4Cl2 (A = Sr, Ba) with an A2Cl2 block layer and therefore a trans-CuO4Cl2 octahedron. These results suggest that SrCu3O4 is a suitable parent material for electron-doped superconductivity based on the Cu3O4 plane.

中文翻译:

具有无限Cu3 / 2O2层的SrCu3O4的外延稳定化。

我们报告使用分子束外延外延薄膜合成的SrCu 3 O 4与无限堆叠的Cu 3 O 4层组成的边缘共享的CuO 4方形平面。实验和理论表征表明,该材料是亚稳相,可以通过从(001)-SrTiO 3衬底施加拉伸双轴应变来存在。SrCu 3 O 4表现出根据X射线光电子能谱显示的Cu 2+价态的绝缘电阻率。第一性原理计算还表明,空置的d 3 z 2与带有A 2 Cl 2阻隔层的A 2 Cu 3 O 4 Cl 2(A = Sr,Ba)相比, r 2带由于没有顶端阴离子而变得基本稳定,因此具有反式-CuO 4 Cl 2八面体。这些结果表明,SrCu 3 O 4是基于Cu 3 O 4平面的电子掺杂超导性的合适母体材料。
更新日期:2020-07-20
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