Ultrafast, high-intensity light-matter interactions lead to optical-field-driven photocurrents with an attosecond-level temporal response. These photocurrents can be used to detect the carrier-envelope-phase (CEP) of short optical pulses, and enable optical-frequency, petahertz (PHz) electronics for high-speed information processing. Despite recent reports on optical-field-driven photocurrents in various nanoscale solid-state materials, little has been done in examining the large-scale electronic integration of these devices to improve their functionality and compactness. In this work, we demonstrate enhanced, on-chip CEP detection via optical-field-driven photocurrents in a monolithic array of electrically-connected plasmonic bow-tie nanoantennas that are contained within an area of hundreds of square microns. The technique is scalable and could potentially be used for shot-to-shot CEP tagging applications requiring orders-of-magnitude less pulse energy compared to alternative ionization-based techniques. Our results open avenues for compact time-domain, on-chip CEP detection, and inform the development of integrated circuits for PHz electronics as well as integrated platforms for attosecond and strong-field science.

超快、高强度的光与物质相互作用产生具有阿秒级时间响应的光场驱动光电流。这些光电流可用于检测短光脉冲的载流子包络相位 (CEP)，并使光频、太赫兹 (PHz) 电子器件能够实现高速信息处理。尽管最近有关于各种纳米级固态材料中光场驱动光电流的报道，但在研究这些器件的大规模电子集成以改善其功能和紧凑性方面却几乎没有做任何工作。在这项工作中，我们展示了通过光场驱动光电流在数百平方微米面积内的电连接等离子体领结纳米天线单片阵列中实现增强型片上 CEP 检测。该技术具有可扩展性，并且有可能用于逐次 CEP 标记应用，与替代的基于电离的技术相比，需要的脉冲能量要少几个数量级。我们的研究结果为紧凑时域、片上 CEP 检测开辟了道路，并为 PHz 电子学集成电路以及阿秒和强场科学集成平台的开发提供了信息。