In this study, the effect of the Cu concentration on the characteristics of the Cu₂ZnSnSe₄ (CZTSe) absorber layers and solar cells was systematically analyzed by postselenization of the evaporated precursor deposits. The results demonstrated that an increase in the copper concentration of the precursor linearly increased the Cu content in the final CZTSe thin‐film formation. This significantly increased the particle size and improved the re‐evaporation loss of the SnSe, thus improving the solar cell characteristics. However, a further increase in the Cu concentration reduced the quality of the absorber layer and formed either Cu_xSe or CTSe secondary phases, which was detrimental to the solar cell characteristics. Here, we introduce a sputtered CdS buffer layer for the CZTSe solar cells. These findings offer new research directions for solving the persistent challenges in the chemical bath deposition (CBD) of the CdS in the CZTSe solar cells.

中文翻译：

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利用溅射的CdS缓冲层制造的可持续性Cu2ZnSnSe4光伏电池

在这项研究中，通过蒸发前体沉积物的后硒化，系统地分析了铜浓度对Cu ₂ ZnSnSe ₄（CZTSe）吸收层和太阳能电池特性的影响。结果表明，前体铜浓度的增加线性增加了最终CZTSe薄膜形成过程中的Cu含量。这显着增加了粒径，并改善了SnSe的再蒸发损失，从而改善了太阳能电池的特性。然而，Cu浓度的进一步增加降低了吸收层的质量并形成了Cu _xSe或CTSe二次相，这不利于太阳能电池的特性。在这里，我们介绍了用于CZTSe太阳能电池的溅射CdS缓冲层。这些发现为解决CZTSe太阳能电池中CdS的化学浴沉积（CBD）中的持续挑战提供了新的研究方向。