Surface Functionalization of Black Phosphorus by Cu: Effective Electron Doping and Enhanced Photoresponse,Advanced Materials Interfaces

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Surface Functionalization of Black Phosphorus by Cu: Effective Electron Doping and Enhanced Photoresponse
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2020-07-08 , DOI: 10.1002/admi.202000701
Yue Zheng _{1,

2,

3} , Hang Yang ₄ , Cheng Han ₂ , Hong Ying Mao _{1,

3}

Affiliation

Black phosphorus (BP) emerges as a monoelemental 2D semiconductor with a direct bandgap, exhibiting a hole‐dominated ambipolar transport characteristic. The modulation of charge carriers type and concentration is of great necessity for its applications in electronic and optoelectronic devices. Herein, the effective electron doping of BP by surface functionalization of copper (Cu) is demonstrated. Moreover, the electron mobility of BP increases from 63 to 156 cm² V⁻¹ s⁻¹ after Cu modification. The formation of electron accumulation layer within BP after Cu modification is further revealed by in situ photoelectron spectroscopy characterizations. No chemical reaction is observed at the Cu/BP interface where a notable electron transfer from Cu to BP occurs indicated by an ≈0.20 eV shift of P 2p peak to high binding energy after Cu functionalization. With the formation of local electric field at the interface, the dissociation of photogenerated excitons is facilitated, leading to an ≈6 times enhancement of the photoresponse for Cu‐modified BP.

中文翻译：

铜对黑磷的表面功能化：有效电子掺杂和增强的光响应

黑磷（BP）作为具有直接带隙的单元素2D半导体出现，表现出以空穴为主导的双极传输特性。电荷载流子类型和浓度的调制对于其在电子和光电设备中的应用非常必要。在此，说明了通过铜（Cu）的表面官能化对BP进行的有效电子掺杂。此外，BP的电子迁移率从63 cm增大至156 cm ² V ^-1 s ^-1铜改性后。通过原位光电子能谱表征进一步揭示了Cu改性后BP内电子积聚层的形成。在Cu / BP界面上未观察到化学反应，其中发生了明显的电子从Cu转移到BP的现象，这表明在Cu功能化后P 2p峰向高结合能的≈0.20eV位移。随着界面处局部电场的形成，光生激子的离解得以促进，从而使铜修饰的BP的光响应提高了约6倍。

更新日期：2020-09-11

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