Abstract Self-catalyzed horizontal nanowires (NWs) can greatly simplify the CMOS integration processing compared with the regular vertical counterparts. However, self-catalyzed growth mode poses challenges in manipulating the droplets to produce single-crystalline horizontal NWs with a uniform diameter. Here, we demonstrated a novel method to manipulate the droplet through altering the droplet surface energy. Ga-droplet was successfully moved from top to sidewalls in GaAsP NWs by introducing Be and lowering the surface energy, and pinned at the tip despite the absence of planar defects. This can switch the growth direction, with a successful rate of 100 %, from vertical to horizontal through the assistance of few sparse twins. The produced NWs tend to be bounded by low energy facets, which leads to the self-catalysed growth of horizontal NWs with a greatly improved diameter uniformity along the axis. Besides, the lowered surface energy can effectively suppress the wurtzite nucleation, producing pure zinc blende single-crystalline horizontal NWs. This study establishes an essential step toward the efficient integration of NWs into CMOS compatible devices.

中文翻译：

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高质量自催化 GaAsP 纳米线的液滴操作和水平生长

摘要 自催化水平纳米线 (NW) 与常规垂直纳米线相比，可以大大简化 CMOS 集成工艺。然而，自催化生长模式在操纵液滴以产生具有均匀直径的单晶水平纳米线方面存在挑战。在这里，我们展示了一种通过改变液滴表面能来操纵液滴的新方法。通过引入 Be 和降低表面能，Ga 液滴成功地从 GaAsP NW 的顶部移动到侧壁，并在没有平面缺陷的情况下固定在尖端。这可以通过少数稀疏双胞胎的帮助，以100%的成功率转换生长方向，从垂直到水平。产生的 NW 往往受低能量面的限制，这导致水平 NW 的自催化生长，沿轴的直径均匀性大大提高。此外，降低的表面能可以有效抑制纤锌矿形核，产生纯闪锌矿单晶水平纳米线。这项研究为将 NW 有效集成到 CMOS 兼容设备中迈出了重要的一步。