Abstract In Cd-based and CIGS solar cells, the CdS is used as optical window to ensure maximum transmittance of the incident irradiance towards absorber-layer while Cadmium free viable alternative is required to replace toxic CdS layer. Herein, ZnSe films of thickness 200 nm were prepared by electron-beam evaporation followed by annealing in air ambient and vacuum within temperature range 100−300 °C and then subjected to various characterization tools to optimize physical properties for buffer layer applications. The structural properties demonstrate Zinc blende cubic structure with preferred reflection corresponding to (111) plane. The optical properties reveal to high transmittance in visible and nearly IR regions and direct energy band-gap is estimated within 2.53–2.65 eV range. The surface morphology indicates uniform deposition with grain-growth, EDS analysis confirms deposition of films and current-voltage relation indicates ohmic behavior. The findings warrant for applying films air annealed at 300 °C as potential buffer-layer in solar cells.

中文翻译：

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不同退火条件对用于环保缓冲层应用的 ZnSe 薄膜物理性能的影响

摘要 在 Cd 基和 CIGS 太阳能电池中，CdS 被用作光学窗口，以确保入射辐照向吸收层的最大透射率，而无镉的可行替代品需要替代有毒的 CdS 层。在此，厚度为 200 nm 的 ZnSe 薄膜是通过电子束蒸发制备的，然后在空气环境和真空中在 100-300 °C 的温度范围内退火，然后进行各种表征工具以优化缓冲层应用的物理性能。结构特性表明闪锌矿立方结构具有对应于（111）面的优选反射。光学特性表明在可见光和近红外区域具有高透射率，直接能带隙估计在 2.53-2.65 eV 范围内。表面形态表明随着晶粒生长均匀沉积，EDS 分析证实了薄膜的沉积，电流-电压关系表明了欧姆行为。该研究结果证明将在 300°C 下空气退火的薄膜用作太阳能电池中的潜在缓冲层。