Abstract Over the past two decades, there have been numerous reports about the p-type behavior of N-doped ZnO. To date, however, its origin still remains mysterious, especially, N ion-implanted ZnO system. Herein, ZnO films were implanted with 70 keV N ions to a fluence of 1 × 1017 cm−2 at room temperature, followed by annealing in the range of 750–950 °C. The obtained p-type ZnO films have a widely hole concentration of 2.87 × 1015 ~ 2.64 × 1016 cm−3, a mobility of 1.37 ~ 7.27 cm2V-1s−1 and a resistivity of 148.3 ~ 299.4 Ω.cm. The thermal evolution of point defects and the possible shallow acceptors in N-implanted ZnO films were further investigated by means of Raman scattering, Photoluminescence (PL) and Electron paramagnetic resonance (EPR). The results show that abundant intrinsic-related defects including zinc interstitials (Zni), oxygen vacancies (VO) and zinc vacancies (VZn) were introduced during ion implantation. It is demonstrated that appropriate post-annealing can not only reduce the compensation of donor defects, but also facilitate the formation of N-related shallow acceptor complexes, both of which contribute to the p-type conduction transition of N-implanted ZnO films. The non-axial NO-VZn complexes are proposed to be a kind of potential and stable acceptors in N ion-implanted ZnO films.

中文翻译：

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氮注入 p 型 ZnO 薄膜中的非轴向 NO-VZn 浅受体配合物

摘要 在过去的 20 年中，关于 N 掺杂 ZnO 的 p 型行为的报道很多。然而，迄今为止，它的起源仍然是个谜，尤其是 N 离子注入的 ZnO 系统。在此，ZnO 薄膜在室温下注入 70 keV N 离子至 1 × 1017 cm-2 的注量，然后在 750-950 °C 的范围内退火。获得的p型ZnO薄膜具有2.87×1015~2.64×1016cm-3的宽空穴浓度，1.37~7.27cm2V-1s-1的迁移率和148.3~299.4Ω.cm的电阻率。通过拉曼散射、光致发光 (PL) 和电子顺磁共振 (EPR) 进一步研究了点缺陷的热演化和 N 注入 ZnO 薄膜中可能的浅受体。结果表明，丰富的内在相关缺陷，包括锌间隙（Zni），在离子注入过程中引入了氧空位（VO）和锌空位（VZn）。结果表明，适当的后退火不仅可以减少施主缺陷的补偿，还可以促进与 N 相关的浅受主配合物的形成，这两者都有助于 N 注入 ZnO 薄膜的 p 型传导转变。非轴向NO-VZn配合物被认为是N离子注入ZnO薄膜中一种潜在且稳定的受体。