Abstract Transparent optoelectronics devices have recently drawn considerable research attentions for the next generation electronic technologies. Here, we fabricate highly transparent (87 to 90% under visible light) composite films of graphene oxide (GO) and zinc oxide (ZnO) by all-solution process. The non-linear current–voltage characteristics at room temperature resemble Schottky barrier junction formation between ZnO-GO film surface and Ag dot. Under UV irradiation (λ ~ 375 nm and power density ~1 mW/cm2) the ideality factor increases from 7.82 to 8.72 but the potential barrier height reduces from 0.66 to 0.50 eV in ZnO and ZnO-GO 25% films which are favorable for advancing optoelectronic technologies. This is demonstrated by excellent UV photoresponsivity of 5.3 A/W at low bias (+1 V) for ZnO-GO 25% along with low UV response (15.8 s) and recovery times (36.6 s). While at −1 V bias the photoresponsivity reaches to 1.25 A/W. Such distinct characteristics as compared to other reports on all-solution processed ZnO-GO composites could be attributed to the reduction of GO to form rGO within ZnO matrix to develop conducting channels in the composite films, the formation of excellent Schottky barriers with Ag, the modulation in excitonic characteristics by defect distributions at the interfacial regions among rGO flakes and ZnO matrix, and the facilitated charge transport through the junctions.

中文翻译：

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肖特基通过氧化石墨烯复合透明 ZnO 薄膜实现增强的紫外线检测

摘要 透明光电子器件最近引起了下一代电子技术研究的广泛关注。在这里，我们通过全溶液工艺制造了高度透明（在可见光下为 87% 至 90%）的氧化石墨烯 (GO) 和氧化锌 (ZnO) 复合膜。室温下的非线性电流-电压特性类似于 ZnO-GO 膜表面和 Ag 点之间的肖特基势垒结形成。在紫外线照射下（λ ~ 375 nm 和功率密度 ~1 mW/cm2），理想因子从 7.82 增加到 8.72，但势垒高度从 0.66 eV 降低到 0.50 eV，ZnO 和 ZnO-GO 25% 薄膜有利于推进光电技术。这通过 25% ZnO-GO 在低偏压 (+1 V) 下 5.3 A/W 的出色紫外线光响应性以及低紫外线响应 (15. 8 秒）和恢复时间（36.6 秒）。在 -1 V 偏置下，光响应度达到 1.25 A/W。与其他关于全溶液处理的 ZnO-GO 复合材料的报道相比，这种独特的特性可归因于 GO 还原在 ZnO 基质中形成 rGO，从而在复合膜中形成导电通道，与 Ag 形成优异的肖特基势垒，通过 rGO 薄片和 ZnO 基质之间的界面区域的缺陷分布对激子特性的调制，以及促进电荷通过结的传输。