当前位置: X-MOL 学术RSC Adv. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Physical vapor deposited organic ferroelectric diisopropylammonium bromide film and its self-powered photodetector characteristics
RSC Advances ( IF 3.9 ) Pub Date : 2020-7-7 , DOI: 10.1039/d0ra03968c
Shanmuga Priya K 1 , Lakshmi Kola 1 , Subhajit Pal 1 , Pranab Parimal Biswas 1 , P Murugavel 1
Affiliation  

Organic diisopropylammonium bromide (DIPAB) is a promising material with superior ferroelectric characteristics. However, the DIPAB continuous film, which is essential to explore its application potential, is challenging because its crystallization kinetics favors island-like microcrystalline growth. In this work, the continuous and uniform deposition of organic ferroelectric DIPAB film on a single crystalline Si(100) substrate is demonstrated by a thermal evaporation process. Structural and optical studies reveal that the film is c-axis oriented with an optical bandgap of 3.52 eV. The topographic image displays well-connected grain-like surface morphology with ∼2 nm roughness. The ferroelectric domain studies illustrate the in-plane orientation of the domains, which is in accordance with c-axis oriented film where polarization is along the in-plane b-axis. The phase and amplitude responses of the domains display hysteresis and butterfly characteristics, respectively and thereby endorse the ferroelectric nature of the film. Importantly, it is demonstrated that the DIPAB film exhibits remarkable self-powered UV-Vis photodetector characteristics with responsivity of 0.66 mA W−1 and detectivity of 2.20 × 109 Jones at 11.45 mW cm−2 light intensity. The fabricated DIPAB film reported in this work can widen its application potential in self-powered photodetector and other optoelectronic devices.

中文翻译:

物理气相沉积有机铁电二异丙基溴化铵薄膜及其自供电光电探测器特性

有机二异丙基溴化铵(DIPAB)是一种具有优异铁电特性的有前途的材料。然而,探索其应用潜力所必需的 DIPAB 连续薄膜具有挑战性,因为它的结晶动力学有利于岛状微晶生长。在这项工作中,通过热蒸发工艺证明了有机铁电 DIPAB 薄膜在单晶 Si(100) 衬底上的连续均匀沉积。结构和光学研究表明,薄膜是c轴取向的,光学带隙为 3.52 eV。形貌图像显示连接良好的颗粒状表面形态,粗糙度约为 2 nm。铁电畴研究说明了畴的面内取向,这符合c轴取向薄膜,其中偏振沿面内b轴。畴的相位和幅度响应分别显示出滞后和蝶形特性,从而证明了薄膜的铁电特性。重要的是,证明 DIPAB 薄膜表现出显着的自供电 UV-Vis 光电探测器特性,在 11.45 mW cm -2光强下具有 0.66 mA W -1的响应度和 2.20 × 10 9 Jones 的探测率。这项工作中报道的制造的 DIPAB 薄膜可以扩大其在自供电光电探测器和其他光电器件中的应用潜力。
更新日期:2020-07-07
down
wechat
bug