Topologically Nontrivial Phase-Change Compound GeSb2Te4.,ACS Nano

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Topologically Nontrivial Phase-Change Compound GeSb2Te4.
ACS Nano ( IF 15.8 ) Pub Date : 2020-07-06 , DOI: 10.1021/acsnano.0c04145
Munisa Nurmamat _{1,

2} , Kazuaki Okamoto ₁ , Siyuan Zhu ₁ , Tatiana V Menshchikova _{3,

4} , Igor P Rusinov _{3,

4,

5} , Vladislav O Korostelev ₃ , Koji Miyamoto ₆ , Taichi Okuda ₆ , Takeo Miyashita ₁ , Xiaoxiao Wang ₁ , Yukiaki Ishida ₇ , Kazuki Sumida _{1,

8} , Eike F Schwier ₆ , Mao Ye ₉ , Ziya S Aliev _{10,

11} , Mahammad B Babanly _{12,

13} , Imamaddin R Amiraslanov _{11,

13} , Evgueni V Chulkov _{4,

5,

14} , Konstantin A Kokh _{15,

16} , Oleg E Tereshchenko _{16,

17} , Kenya Shimada ₆ , Shik Shin ₇ , Akio Kimura _{1,

2}

Affiliation

Department of Physical Sciences, Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan.
Graduate School of Advanced Science and Engineering, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan.
Tomsk State University, 634050 Tomsk, Russia.
Departamento de F́ısica de Materiales UPV/EHU, CFM-MPC UPV/EHU, 20080 San Sebastían/Donostia, Basque Country, Spain.
St. Petersburg State University, Universitetskaya nab., 7/9, 199034 St. Petersburg, Russia.
Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan.
Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwa-no-ha, Kashiwa, Chiba 277-8581, Japan.
Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan.
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.
Azerbaijan State Oil and Industry University, AZ1010 Baku, Azerbaijan.
Institute of Physics, ANAS, AZ1143 Baku, Azerbaijan.
Institute of Catalysis and Inorganic Chemistry, ANAS, AZ1143, Baku, Azerbaijan.
Baku State University, AZ1148 Baku, Azerbaijan.
Donostia International Physics Center (DIPC), 20018 San Sebastían/Donostia, Basque Country, Spain.
V.S. Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, Koptyuga pr. 3, Novosibirsk 630090, Russia.
Novosibirsk State University, ul. Pirogova 2, Novosibirsk 630090, Russia.
A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent_eva 13, Novosibirsk 630090, Russia.

Chalcogenide phase-change materials show strikingly contrasting optical and electrical properties, which has led to their extensive implementation in various memory devices. By performing spin-, time-, and angle-resolved photoemission spectroscopy combined with the first-principles calculation, we report the experimental results that the crystalline phase of GeSb₂Te₄ is topologically nontrivial in the vicinity of the Dirac semimetal phase. The resulting linearly dispersive bulk Dirac-like bands that cross the Fermi level and are thus responsible for conductivity in the stable crystalline phase of GeSb₂Te₄ can be viewed as a 3D analogue of graphene. Our finding provides us with the possibility of realizing inertia-free Dirac currents in phase-change materials.

中文翻译：

拓扑上无关紧要的相变化合物GeSb2Te4。

硫属化物相变材料显示出明显不同的光学和电学性质，这导致了它们在各种存储设备中的广泛应用。通过执行自旋，时间和角度分辨光发射光谱与第一原理计算相结合，我们报告了实验结果，即在Dirac半金属相附近，GeSb ₂ Te ₄的晶相在拓扑上是无关紧要的。产生的线性弥散体块状狄拉克能带穿过费米能级，因此负责GeSb ₂ Te ₄稳定结晶相中的电导率可以看作是石墨烯的3D类似物。我们的发现为我们提供了在相变材料中实现无惯性狄拉克电流的可能性。

更新日期：2020-07-28

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