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Topologically Nontrivial Phase-Change Compound GeSb2Te4.
ACS Nano ( IF 15.8 ) Pub Date : 2020-07-06 , DOI: 10.1021/acsnano.0c04145
Munisa Nurmamat 1, 2 , Kazuaki Okamoto 1 , Siyuan Zhu 1 , Tatiana V Menshchikova 3, 4 , Igor P Rusinov 3, 4, 5 , Vladislav O Korostelev 3 , Koji Miyamoto 6 , Taichi Okuda 6 , Takeo Miyashita 1 , Xiaoxiao Wang 1 , Yukiaki Ishida 7 , Kazuki Sumida 1, 8 , Eike F Schwier 6 , Mao Ye 9 , Ziya S Aliev 10, 11 , Mahammad B Babanly 12, 13 , Imamaddin R Amiraslanov 11, 13 , Evgueni V Chulkov 4, 5, 14 , Konstantin A Kokh 15, 16 , Oleg E Tereshchenko 16, 17 , Kenya Shimada 6 , Shik Shin 7 , Akio Kimura 1, 2
Affiliation  

Chalcogenide phase-change materials show strikingly contrasting optical and electrical properties, which has led to their extensive implementation in various memory devices. By performing spin-, time-, and angle-resolved photoemission spectroscopy combined with the first-principles calculation, we report the experimental results that the crystalline phase of GeSb2Te4 is topologically nontrivial in the vicinity of the Dirac semimetal phase. The resulting linearly dispersive bulk Dirac-like bands that cross the Fermi level and are thus responsible for conductivity in the stable crystalline phase of GeSb2Te4 can be viewed as a 3D analogue of graphene. Our finding provides us with the possibility of realizing inertia-free Dirac currents in phase-change materials.

中文翻译:

拓扑上无关紧要的相变化合物GeSb2Te4。

硫属化物相变材料显示出明显不同的光学和电学性质,这导致了它们在各种存储设备中的广泛应用。通过执行自旋,时间和角度分辨光发射光谱与第一原理计算相结合,我们报告了实验结果,即在Dirac半金属相附近,GeSb 2 Te 4的晶相在拓扑上是无关紧要的。产生的线性弥散体块状狄拉克能带穿过费米能级,因此负责GeSb 2 Te 4稳定结晶相中的电导率可以看作是石墨烯的3D类似物。我们的发现为我们提供了在相变材料中实现无惯性狄拉克电流的可能性。
更新日期:2020-07-28
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