Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators.

由于缺乏可扩展的绝缘体，基于二维材料的纳米电子器件远未发挥其全部理论性能潜力。在硅技术中表现良好的非晶氧化物与 2D 材料的界面不明确且存在大量缺陷，而 2D 六方氮化硼则无法满足所需的介电规格。目前合适的替代绝缘体的列表非常有限。因此，对于适用于 2D 技术的绝缘体，可能需要一种完全不同的思维方式。我们回顾了可能的解决方案场景，例如创建干净的界面、从二维半导体生产原生氧化物以及对晶体绝缘体进行更深入的研究。