Tunable Short-Term Plasticity Response in Three-Terminal Organic Neuromorphic Devices,ACS Applied Electronic Materials

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Tunable Short-Term Plasticity Response in Three-Terminal Organic Neuromorphic Devices
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-07-06 , DOI: 10.1021/acsaelm.0c00313
Michele Di Lauro ₁ , Anna De Salvo _{1,

2} , Gioacchino Calandra Sebastianella ₃ , Michele Bianchi ₁ , Stefano Carli ₁ , Mauro Murgia _{1,

4} , Luciano Fadiga _{1,

2} , Fabio Biscarini _{1,

5}

Affiliation

Reversibly tunable short-term plasticity (STP) of the channel current in organic neuromorphic devices is demonstrated with a three-terminal architecture. Electrolyte-gated organic transistors—EGOTs—are driven with square voltage pulses at the drain electrodes, while the gate bias enables the modulation of the amplitude and characteristic time scale of the depressive STP spiking response up to 1 order of magnitude. The gate potential sets the baseline and the steady-state current, preluding multilevel memory writing. The fine-tuning of the STP response, which is not possible with two-electrode organic neuromorphic devices, is reversible and does not imply chemical modifications of the active layer.

中文翻译：

三端子有机神经形态装置中的可调短期可塑性响应

通过三端结构展示了有机神经形态设备中通道电流的可逆可调短期可塑性（STP）。电解质门控有机晶体管（EGOT）在漏极电极上受到方形电压脉冲的驱动，而栅极偏置使压抑式STP尖峰响应的幅度和特征时间标度调制达到1个数量级。栅极电势设置基线和稳态电流，从而进行多级存储器写入。STP响应的微调是可逆的，这在两电极有机神经形态设备中是不可能的，并且并不意味着对活性层进行化学修饰。

更新日期：2020-07-28

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