The charge transport in thin thermal silicon oxide films treated in electron cyclotron resonance hydrogen plasma at different exposure times was investigated. X-ray photoelectron studies show that such treatment leads to the oxygen deficiency of the films. It was established that the treatment of the films in plasma leads to an increase of their conductivity by a factor of about 10². The film charge transport properties were studied at different temperatures and analyzed within four theoretical dielectric conductivity models. It was found that the charge transport mechanism is described by Fowler-Nordheim model in the initial silicon oxide and by the model of phonon-assisted electron tunneling between neutral traps after the treatment in hydrogen plasma. The thermal trap ionization energy value (W_t = 1.6 eV) measured from transport experiments is in agreement with that obtained from ab initio calculations for the oxygen vacancy (Si-Si bond) in SiO₂.

研究了电子回旋共振氢等离子体中不同曝光时间处理的热氧化硅薄膜中的电荷传输。X射线光电子研究表明，这种处理导致薄膜的氧缺乏。已经确定，在等离子体中对膜的处理导致其电导率增加约10 ²倍。在不同的温度下研究了薄膜的电荷传输特性，并在四个理论电导率模型中进行了分析。已经发现，在初始氧化硅中，电荷转移机制由Fowler-Nordheim模型描述，并且在氢等离子体处理后，由中子陷阱之间的声子辅助电子隧穿模型描述。热阱电离能值（W 传输实验测得的_t = 1.6 eV与从头算计算得出的SiO _2中氧空位（Si-Si键）一致。