The presented model shows that for any trap distribution in semiconductor quantum dots (QDs) the evolution of photoinduced charge carriers (as a rule, responsible for observed signals in optical spectroscopic studies of QDs) consists of two prominent components. The fast component lying in the picosecond range reflects the increase and the fast decay of the charge carrier population, and the slow one exhibits the profile of a long-time mono-exponential decay with a decay time ranging from tens ns to few µs. It is important, that the decay time of the slow component depends not only on relaxation processes in QDs but also on a profile of a trap distribution. This finding opens up promising possibilities to gain a new insight into the role of traps in QDs photophysical characteristics by carrying out a detailed analysis of the long-time mono-exponential decay of experimental signals associated with the charge carrier population.

提出的模型表明，对于半导体量子点（QD）中的任何陷阱分布，光感应电荷载流子的演化（通常是负责QD光学光谱研究中观察到的信号）的组成主要由两个部分组成。皮秒级范围内的快速分量反映了电荷载流子总数的增加和快速衰减，而慢速分量则表现出长时间单指数衰减的轮廓，其衰减时间范围为数十ns至几微秒。重要的是，慢速分量的衰减时间不仅取决于量子点中的弛豫过程，而且取决于陷阱分布的轮廓。