Abstract 2D MoS2 has the potential to be used in demanding products such as transistors with capability of overcoming short-channel effects of silicon, ultra-thin solar cells because of huge optical absorption in 2D form, memristors, capacitors, sensors etc. However, the commercial use of 2D MoS2 is hindered by the lack of synthesis methods which provide with high quality large scale deposition. Here we demonstrate the deposition of large area 2D 2H-MoS2 from bulk to bilayers on quartz substrates by industry compatible RF sputtering technique in a sulphur sufficient environment provided by evaporation of sulphur flakes by an in-situ effusion cell. Absorbance spectra of sputtered samples showed peaks corresponding to A, B, convoluted C and D and E excitons. Raman signature peaks of MoS2, A1g near 410 cm−1 and E12g around 380 cm−1 was found in all samples. A1g-E12g value decreased with decreasing deposition time, indicating the formation of thin MoS2 layers up to bilayer which was further supported by the evolution of photoluminescence spectra. AFM measurements exhibited a uniform surface morphology. XPS ascertained the purity of the samples. Thus we could prove that radio frequency magnetron sputtering could be used as an efficient method for large area deposition of 2D MoS2.

中文翻译：

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设想射频磁控溅射作为大规模沉积均匀二维二硫化钼的有效方法

摘要 2D MoS2 具有用于要求苛刻的产品的潜力，例如具有克服硅短沟道效应的晶体管、由于 2D 形式的巨大光吸收的超薄太阳能电池、忆阻器、电容器、传感器等。由于缺乏提供高质量大规模沉积的合成方法，二维二硫化钼的商业应用受到阻碍。在这里，我们展示了大面积 2D 2H-MoS2 从块体到双层在石英基板上的沉积，通过工业兼容的 RF 溅射技术在硫足够的环境中通过原位喷流池蒸发硫片提供。溅射样品的吸收光谱显示出对应于 A、B、复杂的 C、D 和 E 激子的峰。MoS2 的拉曼特征峰，在所有样品中都发现了 410 cm-1 附近的 A1g 和 380 cm-1 附近的 E12g。A1g-E12g 值随着沉积时间的减少而降低，表明形成了薄的 MoS2 层直至双层，光致发光光谱的演变进一步支持了这一点。AFM 测量显示出均匀的表面形态。XPS 确定样品的纯度。因此，我们可以证明射频磁控溅射可以用作二维 MoS2 大面积沉积的有效方法。