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Highly efficient and stable hybrid quantum-dot light-emitting field-effect transistors
Materials Horizons ( IF 12.2 ) Pub Date : 2020-07-06 , DOI: 10.1039/d0mh00951b
Penghui He 1, 2, 3, 4 , Linfeng Lan 1, 2, 3, 4 , Caihao Deng 1, 2, 3, 4 , Jian Wang 1, 2, 3, 4 , Junbiao Peng 1, 2, 3, 4 , Yong Cao 1, 2, 3, 4
Affiliation  

Light-emitting field-effect transistors (LETs) have drawn much attention for their special capability of combining switching and electroluminescence capacity in a single device. Herein, we report a colour-saturated, high-efficiency red quantum-dot hybrid light-emitting field-effect transistor (QD-HLET) with a solution-processed InScO/ZnO-nanoparticle heterojunction channel layer and a deep-level organic hole transport layer (HLT). The red QD-HLET exhibits a field-effect mobility of 3.1 cm2 V−1 s−1 with an on/off ratio of ∼105, a maximum brightness of 145 000 cd m−2 with a peak external quantum efficiency (EQE) of 22.8% and low efficiency roll-off (an EQE of 17.0% at a brightness of 100 000 cd m−2). In addition, the operating stability of the HLET is investigated by monitoring the time-dependent change in the brightness of the QD-HLET under various VGS, while an operational lifetime of more than 153 000 hours at 100 cd m−2 is achieved. A comprehensive study on the electrical and optical characteristics of the red QD-HLET under different operation modes is conducted, and an operation model is proposed.

中文翻译:

高效稳定的混合量子点发光场效应晶体管

发光场效应晶体管(LET)因其在单个器件中结合开关和电致发光功能的特殊功能而备受关注。在此,我们报道了一种具有溶液处理的InScO / ZnO-纳米粒子异质结沟道层和深层有机空穴传输的色饱和,高效红色量子点混合型场效应晶体管(QD-HLET)层(HLT)。红色QD-HLET的场效应迁移率为3.1 cm 2 V -1 s -1,开/关比约为10 5,最大亮度为145 000 cd m -2,具有峰值外部量子效率(EQE) )的22.8%和低效率衰减(在100000 cd m的亮度下的EQE为17.0%)-2)。另外,通过监测在各种V GS下QD-HLET的亮度随时间的变化来研究HLET的操作稳定性,同时在100 cd m -2的条件下可获得超过153 000小时的使用寿命。对红色QD-HLET在不同工作模式下的电学和光学特性进行了综合研究,并提出了一种工作模型。
更新日期:2020-09-01
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