The epitaxial growth of Zr-doped CeO 2 (CZO) films by chemical solution deposition (CSD) on single crystal substrates such as Al 2 O 3 , SrTiO 3 and Y 2 O 3 -stabilized ZrO 2 (YSZ) and their use as buffer layers for Fe(Se,Te) film growth are reported. The growth of 30 nm thin CZO films is mostly dominated by dewetting issues, leading to highly incomplete substrate coverage due to the strong tendency of CZO grains to agglomerate. This effect is less severe on YSZ substrate and, in addition, can be fully controlled by setting the deposition temperature at 950 °C and operating under Ar–H 2 reducing atmosphere. These conditions promote the growth of epitaxial and compact CZO films on YSZ, showing a flat surface morphology with root-mean-square roughness around 2.5 nm. Preliminary results on Fe(Se,Te) film deposited by pulsed laser deposition on CZO-buffered YSZ are reported. Although good epitaxial growth is...

中文翻译：

---

化学溶液沉积外延掺杂Zr的CeO 2薄膜作为Fe（Se，Te）薄膜生长的缓冲层

通过化学溶液沉积（CSD）在诸如Al 2 O 3，SrTiO 3和Y 2 O 3稳定的ZrO 2（YSZ）的单晶衬底上外延生长掺Zr的CeO 2（CZO）薄膜及其用途报道了用于Fe（Se，Te）膜生长的层。30 nm薄膜CZO薄膜的生长主要受去湿问题的影响，由于CZO晶粒强烈凝聚的趋势，导致基材覆盖率非常不完整。在YSZ衬底上这种影响不太严重，此外，可以通过将沉积温度设置为950°C并在Ar–H 2还原气氛下进行操作来完全控制。这些条件促进了YSZ上外延和致密CZO薄膜的生长，显示出平坦的表面形态，均方根粗糙度约为2.5 nm。Fe（Se，报道了通过脉冲激光沉积在CZO缓冲的YSZ上沉积的Te）膜。尽管良好的外延生长是...