This manuscript reports a 2-D compact analytical model for DC characteristics under all possible regimes of operations of a cylindrical gate nanowire junctionless accumulation mode MOSFET including the effects of various device engineering techniques. Superposition technique with appropriate boundary conditions has been used to solve 2-D Poisson’s equation considering both free/accumulation and depletion charges. The minimum potential concept has been used to conceive the threshold voltage formulation considering the effects of structural and electrical quantum confinements. An optimized device model has been formulated incorporating various device engineering. The potential model could also be used for potential modeling of doped inversion mode MOSFETs. Complete drain current including gate induced drain leakage has been derived from the potential model. Drain current has been derived individually for different regions. Further the effects of temperature and trapped interface c...

中文翻译：

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工程纳米线JAM-MOSFET的2-D紧凑型DC模型适用于所有工作状态

该手稿报告了在圆柱形栅极纳米线无结累积模式MOSFET的所有可能工作方式下，直流特性的二维紧凑分析模型，其中包括各种器件工程技术的影响。具有适当边界条件的叠加技术已被用于求解考虑了自由电荷/累积电荷和耗尽电荷的二维泊松方程。考虑到结构和电量子限制的影响，最小势能概念已被用于构思阈值电压公式。已制定出结合各种设备工程的优化设备模型。电位模型也可以用于掺杂反型MOSFET的电位模型。完整的漏极电流（包括栅极引起的漏极泄漏）已从电势模型中得出。已针对不同区域分别导出了漏极电流。温度和截留界面的进一步影响