We fabricated randomly oriented polycrystalline BaSi 2 films on TiN metal layers by sputtering for the deployment of BaSi 2 solar cells on a flexible substrate. The formation of BaSi 2 films was demonstrated by X-ray diffraction and Raman spectroscopy. Photoresponsivity increased at wavelengths <1000 nm, corresponding to the band gap of BaSi 2 , and reached 1.6 A W −1 at a wavelength of 650 nm under a bias voltage of 0.5 V applied to the front ITO electrode with respect to the TiN layers. This value is equivalent to the highest value ever achieved for undoped BaSi 2 epitaxial films grown by MBE.

中文翻译：

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射频溅射在导电层上形成高光敏BaSi 2膜

我们通过溅射在TiN金属层上制备了随机取向的多晶BaSi 2薄膜，以在柔性基板上部署BaSi 2太阳能电池。通过X射线衍射和拉曼光谱法证明了BaSi 2膜的形成。在相对于TiN层施加到前ITO电极的电压为0.5 V的偏置电压下，在<1000 nm的波长下，对应于BaSi 2的带隙，光敏性在650 nm的波长下达到1.6 A W -1。该值等于由MBE生长的未掺杂BaSi 2外延膜所达到的最高值。