The incorporation of point defects into semiconductors could substantially tailor their optical and electrical properties, as well as the spin-based quantum properties. In terms of structural properties, however, efforts have seldom been devoted to the relevant aspects. Herein, we propose a point defects engineering by intentionally introduced vacancies to improve the structural properties. GaN-on-Si are selected as a paradigm to demonstrate the applicability of this new approach. By tuning the growth stoichiometry, nonequilibrium Ga vacancies are intentionally introduced and absorbed by dislocation cores, which leads to dislocation inclination and annihilation in GaN. In addition, this dislocation inclination can proceed without relaxing the compressive lattice stress. These together enable high quality GaN thick layers on Si substrates with dislocation density of 1.6 108 cm-2 and a record electron mobility of 1090 cm2/Vs at carrier density of 1.31016 cm-3. With these advances, a quasi-vertical GaN Schottky barrier diode with the lowest specific on-resistance of 0.95 m/cm2 and highest on/off ratio of 1010 in GaN-on-Si is demonstrated. These results demonstrate the promise of point defect engineering as a new strategy to improve the structural properties, and pave the way for high-performance III-nitride based electronic and optoelectronic devices on Si platforms.

中文翻译：

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硅衬底上III族氮化物的空位工程引起的位错倾斜

将点缺陷结合到半导体中可以实质上调整其光学和电学性质以及基于自旋的量子性质。然而，就结构特性而言，很少致力于相关方面。在此，我们通过有意引入空位来提出点缺陷工程，以改善结构性能。选择GaN-on-Si作为范例来证明这种新方法的适用性。通过调整生长化学计量，有意引入非平衡Ga空位并由位错核吸收，从而导致GaN中的位错倾斜和an没。另外，这种位错倾向可以在不放松压缩晶格应力的情况下进行。这些共同使硅衬底上的高质量GaN厚层具有1.6 108 cm-2的位错密度和1.31016 cm-3的载流子密度记录的电子迁移率为1090 cm2 / Vs。利用这些进展，展示了准垂直GaN肖特基势垒二极管，在GaN-on-Si中其最低导通电阻为0.95 m / cm2，最高开/关比为1010。这些结果证明了点缺陷工程技术作为改善结构性能的新策略的希望，并为在Si平台上基于高性能III氮化物的电子和光电器件铺平了道路。展示了GaN-on-Si中的95 m / cm2和最高的开/关比1010。这些结果证明了点缺陷工程技术作为改善结构性能的新策略的希望，并为在Si平台上基于高性能III氮化物的电子和光电器件铺平了道路。展示了GaN-on-Si中的95 m / cm2和最高的开/关比1010。这些结果证明了点缺陷工程技术作为改善结构性能的新策略的希望，并为在Si平台上基于高性能III氮化物的电子和光电器件铺平了道路。