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Absorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-07-05 , DOI: 10.1002/pip.3314
Mohit Sood 1 , Hossam Elanzeery 1 , Damilola Adeleye 1 , Alberto Lomuscio 1 , Florian Werner 1 , Florian Ehre 1 , Michele Melchiorre 1 , Susanne Siebentritt 1
Affiliation  

Post‐device heat treatment (HT) in chalcopyrite [Cu (In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu‐poor conditions but not under Cu excess. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu‐rich and Cu‐poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu‐rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu‐poor selenide device, low‐temperature HT leads to passivation of bulk, whereas in Cu‐rich devices, no such passivation was observed. The Cu‐rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu‐rich selenides, whereas it increases shunt resistance in Cu‐rich sulfides. The origin of these changes in device performance was investigated with capacitance–voltage measurement, which shows the considerable decrease in carrier concentration with HT in Cu‐poor CuInSe2, and temperature‐dependent current–voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly doped interfacial p+ layer device model in Cu‐rich selenide absorbers and explain the discrepancy between Cu‐poor and Cu‐rich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber.

中文翻译:

吸收剂成分:黄铜矿太阳能电池中热处理有效性的关键参数

已知黄铜矿[Cu(In,Ga)(S,Se)2 ]太阳能电池中的器件后热处理(HT)可改善器件的性能。但是,此HT仅对在贫铜条件下生长但在过量铜条件下生长的吸收器制成的设备有益。我们提出了一项系统研究,以了解HT对CuInSe 2和CuInS 2太阳能电池的影响。这项研究针对的是在同时具有CdS和Zn(O,S)缓冲层的富铜和贫铜化学势下生长的CuInSe 2太阳能电池。此外,我们还研究了富铜的CuInS 2合适的Zn(O,S)缓冲层制备的太阳能电池。对于贫铜的硒化物器件,低温HT导致整体钝化,而在富铜的器件中,未观察到这种钝化。富铜器件受到大分流器的阻碍。HT降低了富铜硒化物中的分流电阻,而它却提高了富铜硫化物中的分流电阻。通过电容-电压测量研究了器件性能的这些变化的根源,电容-电压测量结果表明,Cu贫化的CuInSe 2中的HT导致载流子浓度大大降低,而温度相关的电流-电压测量结果表明少数载流子存在势垒。结合数值模拟,这些发现支持了高度掺杂的界面p +富铜硒化物吸收剂中的金属层器件模型,并解释了贫铜和富铜器件性能之间的差异。我们的发现为根据吸收剂的成分对相同处理如何对设备产生完全不同的影响提供了见解。
更新日期:2020-07-05
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