In 2D materials, when two 1D edges lie close to each other, they form a slit, which demonstrates distinctive electronic features. The conductivity variation over a slit‐based MoS₂ homostructure was demonstrated by Tao Li, Di Wu and co‐workers (article number 2000082) using Scanning Microwave Impedance Microscopy. The potential difference between the two separated flakes can effectively modulate the conductivity along the edges of the slit, which can be controlled independently by the back‐gate voltage and scanning conditions. A novel dual‐gate field‐effect transistor is thus proposed with potentially improved performance.

中文翻译：

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单层MoS2同质结构中狭缝通道的电导率调制

在2D材料中，当两个1D边缘彼此靠近时，它们会形成一条狭缝，这体现出独特的电子功能。Tao Li，Di Wu及其同事（文章编号2000082）使用扫描微波阻抗显微镜证实了基于狭缝的MoS ₂均匀结构的电导率变化。两个分离的薄片之间的电势差可以有效地调节沿狭缝边缘的电导率，这可以通过背栅电压和扫描条件独立控制。因此，提出了一种新型的双栅场效应晶体管，其潜在的性能提高了。